scholarly journals Thermodynamic Modeling of Pure Co Accounting Two Magnetic States for the Fcc Phase

2018 ◽  
Vol 39 (5) ◽  
pp. 502-509 ◽  
Author(s):  
Zhou Li ◽  
Huahai Mao ◽  
Malin Selleby
Keyword(s):  
Thermodynamic Modeling ◽  
Fcc Phase ◽  
Magnetic States

scholarly journals Thermodynamic modeling of the Hf-N system

2018 ◽  
Vol 54 (1) ◽  
pp. 111-118 ◽  
Author(s):  
M. Pang ◽  
Y. Peng ◽  
P. Zhou ◽  
Y. Du
Keyword(s):  
Thermodynamic Modeling ◽  
Composition Range ◽  
Thermodynamic Description ◽  
Electronic Devices ◽  
Cutting Tools ◽  
Phase Diagram Data ◽  
Thermodynamic Quantities ◽  
Materials Development ◽  
Property Data ◽  
Fcc Phase

Hf-N based alloys have been widely used and studied in the fields of electronic devices and cutting tools industry. A thermodynamic description of this system is essential for further materials development. By means of CALPHAD method, a thermodynamic modeling of the Hf-N system was carried out based on the available phase diagram data as well as thermodynamic property data. The Fcc phase is modeled as (Hf, Va)1(N, Va)1 to cover the composition range since the solubility of nitrogen in Fcc phase is reported up to about 52 at.%. A set of self-consistent thermodynamic parameters for the Hf-N system has been obtained. The computed phase diagrams and thermodynamic quantities using the present parameters agree well with the experimental data.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

ELECTRONIC AND MAGNETIC STATES OF ULTRA-THIN Fe FILMS

1984 ◽  
Vol 45 (C5) ◽  
pp. C5-371-C5-371 ◽  
Author(s):  
A. Amiri-Hezaveh ◽  
G. Jennings ◽  
D. J. Joyner ◽  
R. F. Willis
Keyword(s):  
Magnetic States

Thermodynamic Modeling of the Formation of Chromium Carbides in an Applied Metal Layer

2020 ◽  
Vol 40 (10) ◽  
pp. 843-847
Author(s):  
N. P. Aleshin ◽  
N. V. Kobernik ◽  
A. S. Pankratov ◽  
V. V. Petrova
Keyword(s):  
Thermodynamic Modeling ◽  
Metal Layer ◽  
Chromium Carbides
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