Preparation, structural and luminescent properties of nanocrystalline ZnO films doped Ag by close space sublimation method

2018 ◽  
Vol 9 (5) ◽  
pp. 623-630 ◽  
Author(s):  
Viktoriya Khomchenko ◽  
Mikhail Mazin ◽  
Mykola Sopinskyy ◽  
Oksana Lytvyn ◽  
Viktor Dan’ko ◽  
...  
Keyword(s):  
Luminescent Properties ◽  
Zno Films ◽  
Close Space Sublimation ◽  
Sublimation Method ◽  
Space Sublimation

Structural reproducibility of CdTe thin films deposited on different substrates by close space sublimation method

2011 ◽  
Vol 209 (2) ◽  
pp. 272-276 ◽  
Author(s):  
T. Potlog ◽  
N. Spalatu ◽  
N. Maticiuc ◽  
J. Hiie ◽  
V. Valdna ◽  
...  
Keyword(s):  
Thin Films ◽  
Close Space Sublimation ◽  
Sublimation Method ◽  
Cdte Thin Films ◽  
Space Sublimation

scholarly journals Doping the thin films by using the original Close Space Sublimation method

2020 ◽  
Vol 23 (1) ◽  
pp. 5-28
Author(s):  
V.S. Khomchenko ◽  
◽  
M.V. Sopinskyy ◽  
V.A. Dan'ko ◽  
G.P. Olkhovik
Keyword(s):  
Thin Films ◽  
Close Space Sublimation ◽  
Sublimation Method ◽  
Space Sublimation

Assessment of Photovoltaic Junction Position in CdTe Solar Cells Using a Combined FIB-EBIC Technique

2012 ◽  
Vol 1432 ◽  
Author(s):  
Jonathan D. Major ◽  
Leon Bowen ◽  
Robert E. Treharne ◽  
Ken Durose
Keyword(s):  
Solar Cells ◽  
Secondary Electron ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Cdte Solar Cells ◽  
Close Space Sublimation ◽  
Focussed Ion Beam ◽  
Electron Beam Induced Current ◽  
Space Sublimation

ABSTRACTTwo issues relating to the determination of junction position in thin film CdTe solar cells have been investigated. Firstly, the use of a focussed ion beam (FIB) milling as a method of sample preparation for electron beam induced current (EBIC) analysis is demonstrated. It is superior to fracturing methods. High quality secondary electron and combined secondary electron/EBIC images are presented and interpreted for solar cells with CdTe layers deposited by both close space sublimation (CSS) or RF sputtering. Secondly, it was shown that in an RF-sputtered CdTe device, while the photovoltaic junction was buried ~1.1 μm from the metallurgical interface, the shape of the external quantum efficiency (EQE) curve did not indicate the presence of a buried homo-junction. SCAPS modelling was used to verify that EQE curve shapes are not sensitive to junctions buried < 1.5μm from the CdTe/CdS interface.

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