Epitaxial Growth of High-Resistivity CdTe Thick Films Grown Using a Modified Close Space Sublimation Method

2010 ◽  
Vol 49 (2) ◽  
pp. 025504 ◽  
Author(s):  
Quanzhong Jiang ◽  
Andy W. Brinkman ◽  
Perumal Veeramani ◽  
Paul. J. Sellin
2018 ◽  
Vol 9 (5) ◽  
pp. 623-630 ◽  
Author(s):  
Viktoriya Khomchenko ◽  
Mikhail Mazin ◽  
Mykola Sopinskyy ◽  
Oksana Lytvyn ◽  
Viktor Dan’ko ◽  
...  

2011 ◽  
Vol 209 (2) ◽  
pp. 272-276 ◽  
Author(s):  
T. Potlog ◽  
N. Spalatu ◽  
N. Maticiuc ◽  
J. Hiie ◽  
V. Valdna ◽  
...  

2020 ◽  
Vol 23 (1) ◽  
pp. 5-28
Author(s):  
V.S. Khomchenko ◽  
◽  
M.V. Sopinskyy ◽  
V.A. Dan'ko ◽  
G.P. Olkhovik

2014 ◽  
Vol 633 ◽  
pp. 269-272 ◽  
Author(s):  
Jun Nan Wang ◽  
Lin Wang ◽  
Huan Huan Ji ◽  
Bing Ren ◽  
Yi Ming Yang ◽  
...  

Cd1-xMnxTe (CdMnTe) can be a good candidate for gamma and X-ray detection because of its wide band-gap, high resistivity, and good electro-transport properties. Polycrystalline CdMnTe films were grown by closed-space sublimation method on glasses at different substrate temperatures. In this paper, substrate temperature dependent surface morphology, chemical composition, structural and electrical properties of CdMnTe films are investigated systematically.


2012 ◽  
Vol 1432 ◽  
Author(s):  
Jonathan D. Major ◽  
Leon Bowen ◽  
Robert E. Treharne ◽  
Ken Durose

ABSTRACTTwo issues relating to the determination of junction position in thin film CdTe solar cells have been investigated. Firstly, the use of a focussed ion beam (FIB) milling as a method of sample preparation for electron beam induced current (EBIC) analysis is demonstrated. It is superior to fracturing methods. High quality secondary electron and combined secondary electron/EBIC images are presented and interpreted for solar cells with CdTe layers deposited by both close space sublimation (CSS) or RF sputtering. Secondly, it was shown that in an RF-sputtered CdTe device, while the photovoltaic junction was buried ~1.1 μm from the metallurgical interface, the shape of the external quantum efficiency (EQE) curve did not indicate the presence of a buried homo-junction. SCAPS modelling was used to verify that EQE curve shapes are not sensitive to junctions buried < 1.5μm from the CdTe/CdS interface.


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