Temperature-Dependent Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes

2013 ◽  
Vol 43 (1-2) ◽  
pp. 13-21 ◽  
Author(s):  
Y. Munikrishana Reddy ◽  
M. K. Nagaraj ◽  
M. Siva Pratap Reddy ◽  
Jung-Hee Lee ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage

Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

2015 ◽  
Vol 650 ◽  
pp. 658-663 ◽  
Author(s):  
Zagarzusem Khurelbaatar ◽  
Min-Sung Kang ◽  
Kyu-Hwan Shim ◽  
Hyung-Joong Yun ◽  
Jouhan Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

Silicon ◽  
2018 ◽  
Vol 11 (6) ◽  
pp. 2647-2657 ◽  
Author(s):  
Durmuş Ali Aldemir ◽  
Rukiye Aldemir ◽  
Ali Kökce ◽  
Songül Duman ◽  
Ahmet Faruk Özdemir
Keyword(s):  
Thermal Neutron ◽  
Schottky Barrier ◽  
Neutron Irradiation ◽  
Schottky Barrier Diodes ◽  
Thermal Neutron Irradiation ◽  
Current Voltage ◽  
Capacitance Voltage

Statistical Analysis of the Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of the Au/Ir/n-InGaN Schottky Barrier Diodes

2018 ◽  
Vol 24 (8) ◽  
pp. 5582-5586
Author(s):  
R Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Ideality Factor ◽  
Series Resistance ◽  
Electron Beam Evaporation ◽  
Statistical Distribution ◽  
Schottky Barrier Diodes ◽  
Shunt Resistance ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
The Mean

In the present work, 20 Au/Ir/n-InGaN Schottky barrier diodes (SBDs) are fabricated using a electron beam evaporation technique. The Schottky barrier parameters such as ideality factor (n), Schottky barrier height (SBH) (Φb) and donar concentration (Nd) values are determined by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. From I–V measurements, the statistical distribution of data gives the mean SBH value of 0.70 eV with a normal deviation of 10 meV and mean ideality factor value of 1.50 with a normal deviation of 0.0478. Two important parameters such as series resistance (RS) and shunt resistance (RSh) are also evaluated from the I–V characteristics. Furthermore, Norde and Cheung’s methods are used to evaluate the SBH, ideality factor and series resistance. The statistical distribution of C–V data gives the mean SBH value of 0.91 eV with a normal deviation of 12 meV and mean donar concentration of 0.71 × 1017 cm−3, with a normal deviation of 0.018 × 1017 cm−3 respectively.

Sign in / Sign up

Export Citation Format

Share Document