Modelling of residence time distributions of the gas phase in bubble columns in the liquid circulation regime

1986 ◽  
Vol 41 (10) ◽  
pp. 2693-2698 ◽  
Author(s):  
O. Molerus ◽  
M. Kurtin
Keyword(s):  
Gas Phase ◽  
Residence Time ◽  
Bubble Columns ◽  
Liquid Circulation ◽  
Circulation Regime ◽  
Residence Time Distributions

Residence time distributions in SX–EW equipment

1998 ◽  
Vol 54 (3-4) ◽  
pp. 235-242 ◽  
Author(s):  
Hossein Aminian ◽  
Claude Bazin ◽  
Daniel Hodouin
Keyword(s):  
Residence Time ◽  
Residence Time Distributions

Comparative Study of GaN Growth Process by MOVPE

1999 ◽  
Vol 572 ◽  
Author(s):  
Jingxi Sun ◽  
J. M. Redwing ◽  
T. F. Kuech
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
Gas Phase ◽  
Residence Time ◽  
Gas Flow ◽  
Flow Sheet ◽  
Flow Zone ◽  
High Quality ◽  
Phase Temperature ◽  
High Temperature Gas

ABSTRACTA comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. Our study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Effect of Particle Residence Time on Particle Dispersion in a Plane Mixing Layer

1993 ◽  
Vol 115 (4) ◽  
pp. 751-759 ◽  
Author(s):  
Tsuneaki Ishima ◽  
Koichi Hishida ◽  
Masanobu Maeda
Keyword(s):  
Gas Phase ◽  
Residence Time ◽  
Time Scale ◽  
Characteristic Time ◽  
Mixing Layer ◽  
Particle Dispersion ◽  
Laser Doppler Velocimeter ◽  
Characteristic Time Scale ◽  
Two Phase ◽  
Particle Residence Time

A particle dispersion has been experimentally investigated in a two-dimensional mixing layer with a large relative velocity between particle and gas-phase in order to clarify the effect of particle residence time on particle dispersion. Spherical glass particles 42, 72, and 135 μm in diameter were loaded directly into the origin of the shear layer. Particle number density and the velocities of both particle and gas phase were measured by a laser Doppler velocimeter with modified signal processing for two-phase flow. The results confirmed that the characteristic time scale of the coherent eddy apparently became equivalent to a shorter characteristic time scale due to a less residence time. The particle dispersion coefficients were well correlated to the extended Stokes number defined as the ratio of the particle relaxation time to the substantial eddy characteristic time scale which was evaluated by taking account of the particle residence time.

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