Crystal growth morphology in high purity white phosphorus

LYSO:Ce single crystal was widely manufactured by Czochralski method. Considering its high cost and the pollution of the crucible, we tried to prepare the crystal by Verneuil method. Unlike Czochralski method, the Verneuil method need the powders with excellent fluidity and high purity. By comparing the powders annealed at 1100°C,1200°C,1300°C,1400°C and 1500°C, we can obtained the needed powders at 1500°C. We also increased the content of silica to satisfy the volatilization in crystal growth process. The single crystal was prepared by changing the growth parameter. We investigated the phase and the microstructure of the powders and observed the microstucture of the crystal fracture. We discussed the improved method of the process of crystal growth.

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Crystal growth, morphology, spectrographic characterization and thermal properties of 4,5-bis(benzoylthio)-1,3-dithiole-2-thione

Crystal Research and Technology ◽

10.1002/crat.200711116 ◽

2008 ◽

Vol 43 (8) ◽

pp. 874-881 ◽

Cited By ~ 3

Author(s):

Xinqiang Wang ◽

Dong Xu ◽

Guanghui Zhang ◽

Quan Ren ◽

Weiliang Liu

Keyword(s):

Thermal Properties ◽

Crystal Growth ◽

Growth Morphology

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Crystal growth and detector performance of large size High-purity Ge crystals

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.04.044 ◽

2015 ◽

Vol 39 ◽

pp. 54-60 ◽

Cited By ~ 12

Author(s):

Guojian Wang ◽

Mark Amman ◽

Hao Mei ◽

Dongming Mei ◽

Klaus Irmscher ◽

...

Keyword(s):

Crystal Growth ◽

High Purity ◽

Detector Performance ◽

Large Size

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New advances in crystal growth of high purity berlinite: a new solvent the sulfuric acid

10.1109/freq.1988.27594 ◽

2003 ◽

Cited By ~ 3

Author(s):

E. Philippot ◽

A. Goiffon ◽

J.C. Jumas ◽

C. Avinens ◽

J. Detaint ◽

...

Keyword(s):

Crystal Growth ◽

Sulfuric Acid ◽

High Purity

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Experimental study on the ibuprofen crystal growth morphology in solution

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)00969-1 ◽

2001 ◽

Vol 224 (3-4) ◽

pp. 335-341 ◽

Cited By ~ 52

Author(s):

H Cano ◽

N Gabas ◽

J.P Canselier

Keyword(s):

Experimental Study ◽

Crystal Growth ◽

Growth Morphology

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Synthesis of Source Powder for SiC Crystal Growth Using High Purity Silicon and Carbon Powder

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.529.64 ◽

2012 ◽

Vol 529 ◽

pp. 64-68

Author(s):

H. Wang ◽

C.F. Yan ◽

H.K. Kong ◽

J.J. Chen ◽

J. Xin ◽

...

Keyword(s):

Crystal Growth ◽

Lattice Constant ◽

High Purity ◽

Synthesis Temperature ◽

Carbon Powder ◽

X Ray Diffraction ◽

Prepared Powder ◽

X Ray ◽

High Purity Silicon

This work focused on the synthesis of source powder for SiC crystal growth. SiC powder was prepared using high purity silicon and carbon powder. Broad ranges of temperature and Ar pressure were studied on the property of the as-prepared powder. X-ray diffraction (XRD) results show that SiC polytypes were determined by synthesis temperature, while not related to the variation of Ar pressure. The lattice constant of SiC would expand when Ar pressure decreased. Raman results revealed that the variation of Ar pressure would influence SiC crystallization. It was found that the concentrations of free C, free Si and nitrogen all varied with the variation of temperature or Ar pressure.

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