New advances in crystal growth of high purity berlinite: a new solvent the sulfuric acid

2003 ◽  
Author(s):  
E. Philippot ◽  
A. Goiffon ◽  
J.C. Jumas ◽  
C. Avinens ◽  
J. Detaint ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Sulfuric Acid ◽  
High Purity

Crystal growth morphology in high purity white phosphorus

1977 ◽  
Vol 37 (1) ◽  
pp. 64-68 ◽  
Author(s):  
J.D. Ayers ◽  
R.J. Schaefer ◽  
M.E. Glicksman
Keyword(s):  
Crystal Growth ◽  
High Purity ◽  
White Phosphorus ◽  
Growth Morphology

Zinc carbonate recovery from brass melting slag

2021 ◽  
Vol 98 ◽  
pp. 14-18
Author(s):  
Thao Nguyen Thi ◽  
◽  
Nam Pham Ky ◽  
Ngoc Tran Vu Diem
Keyword(s):  
Sulfuric Acid ◽  
High Purity ◽  
Room Temperature ◽  
Ph Value ◽  
Zinc Carbonate ◽  
Leaching Solution ◽  
Optimized Conditions ◽  
Melting Slag

Brass melting slag (20.38 wt.% Zn) was leached in sulfuric acid with concentration of (50 + 80) g/l H2SO4, leaching temperature of (30 + 60) °C for (30 + 120) min. The optimized conditions for 94.16% Zn extraction from brass melting slag were found as 70 g/l H2SO4, room temperature and 90 min. The leaching solution was purified by removal of Fe through Fe(OH)3 precipitation when adding ZnO to adjust pH value of 5. The solution was continuously cemented by Zn metal at 60 °C for 60 min to obtain Cu metal with high purity of 99 wt.% Cu. The purified solution with 37.64 g/l Zn was modified by Na2C03 to have pH value of about 6 and precipitation of ZnC03 (94.14 %).

Recovery of high purity sulfuric acid from the waste acid in toluene nitration process by rectification

Chemosphere ◽  
2013 ◽  
Vol 90 (4) ◽  
pp. 1558-1562 ◽  
Author(s):  
Kai Song ◽  
Qingqiang Meng ◽  
Fan Shu ◽  
Zhengfang Ye
Keyword(s):  
Sulfuric Acid ◽  
High Purity ◽  
Waste Acid

GaN single crystal growth using high-purity Na as a flux

2002 ◽  
Vol 242 (1-2) ◽  
pp. 70-76 ◽  
Author(s):  
Masato Aoki ◽  
Hisanori Yamane ◽  
Masahiko Shimada ◽  
Seiji Sarayama ◽  
Francis J DiSalvo
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
High Purity ◽  
Single Crystal Growth

Preliminary Exploration on the Preparation of LYSO:Ce Single Crystal Using Verneuil Method

2020 ◽  
Vol 1003 ◽  
pp. 247-253
Author(s):  
Zhi Xin Ma ◽  
Xiao Guo Bi ◽  
Xu Dong Liu ◽  
Xiao Dong Li ◽  
Ji Guang Li ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
High Purity ◽  
Growth Process ◽  
Growth Parameter ◽  
Czochralski Method ◽  
Improved Method ◽  
Crystal Growth Process ◽  
Crystal Fracture

LYSO:Ce single crystal was widely manufactured by Czochralski method. Considering its high cost and the pollution of the crucible, we tried to prepare the crystal by Verneuil method. Unlike Czochralski method, the Verneuil method need the powders with excellent fluidity and high purity. By comparing the powders annealed at 1100°C,1200°C,1300°C,1400°C and 1500°C, we can obtained the needed powders at 1500°C. We also increased the content of silica to satisfy the volatilization in crystal growth process. The single crystal was prepared by changing the growth parameter. We investigated the phase and the microstructure of the powders and observed the microstucture of the crystal fracture. We discussed the improved method of the process of crystal growth.

scholarly journals Crystal growth and detector performance of large size High-purity Ge crystals

2015 ◽  
Vol 39 ◽  
pp. 54-60 ◽  
Author(s):  
Guojian Wang ◽  
Mark Amman ◽  
Hao Mei ◽  
Dongming Mei ◽  
Klaus Irmscher ◽  
...  
Keyword(s):  
Crystal Growth ◽  
High Purity ◽  
Detector Performance ◽  
Large Size

Synthesis of Source Powder for SiC Crystal Growth Using High Purity Silicon and Carbon Powder

2012 ◽  
Vol 529 ◽  
pp. 64-68
Author(s):  
H. Wang ◽  
C.F. Yan ◽  
H.K. Kong ◽  
J.J. Chen ◽  
J. Xin ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Lattice Constant ◽  
High Purity ◽  
Synthesis Temperature ◽  
Carbon Powder ◽  
X Ray Diffraction ◽  
Prepared Powder ◽  
X Ray ◽  
High Purity Silicon

This work focused on the synthesis of source powder for SiC crystal growth. SiC powder was prepared using high purity silicon and carbon powder. Broad ranges of temperature and Ar pressure were studied on the property of the as-prepared powder. X-ray diffraction (XRD) results show that SiC polytypes were determined by synthesis temperature, while not related to the variation of Ar pressure. The lattice constant of SiC would expand when Ar pressure decreased. Raman results revealed that the variation of Ar pressure would influence SiC crystallization. It was found that the concentrations of free C, free Si and nitrogen all varied with the variation of temperature or Ar pressure.

INDIUM SEMI-CONDUCTOR GRADE

Alloy Digest ◽  
1998 ◽  
Vol 47 (3) ◽  
Keyword(s):  
Compressive Strength ◽  
Crystal Growth ◽  
High Temperature ◽  
Physical Properties ◽  
Single Crystal ◽  
High Purity ◽  
Electronic Device ◽  
Compound Semiconductors ◽  
Temperature Performance ◽  
Device Technology

Abstract Semiconductor grade indium products are available in several high purity levels including 7N, 6N5WCI (with controlled impurities), 6N5, and 6N. High purity indium is used in electronic device technology, crystal growth in epitaxial processes, and the production of single crystal III-V compound semiconductors. This datasheet provides information on composition, physical properties, microstructure, hardness, elasticity, tensile properties, and compressive strength. It also includes information on high temperature performance. Filing Code: IN-3. Producer or source: Indium Corporation.

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