High-quality InGaAsP/InP single-quantum wells and superlattice structures grown by low-pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 93 (1-4) ◽  
pp. 376-381 ◽  
Author(s):  
M. Kondo ◽  
S. Yamazaki ◽  
M. Sugawara ◽  
H. Okuda ◽  
K. Kato ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Superlattice Structures

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure

High-quality 1.3 μm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

2011 ◽  
Vol 99 (7) ◽  
pp. 072116 ◽  
Author(s):  
D. Fekete ◽  
R. Carron ◽  
P. Gallo ◽  
B. Dwir ◽  
A. Rudra ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

2014 ◽  
Vol 11 (3-4) ◽  
pp. 393-396
Author(s):  
Guangxu Ju ◽  
Yoshihiro Kato ◽  
Yoshio Honda ◽  
Masao Tabuchi ◽  
Yoshikazu Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Atomic Layer ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
X Ray

High quality In0.15Ga0.85As/AlxGa1−xAs strained multi quantum wells grown by metalorganic vapor phase epitaxy

1992 ◽  
Vol 71 (7) ◽  
pp. 3249-3255 ◽  
Author(s):  
Luc Buydens ◽  
Piet Demeester ◽  
ZongQiang Yu ◽  
Peter Van Daele
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality

High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy

1997 ◽  
Vol 28 (8-10) ◽  
pp. 727-734 ◽  
Author(s):  
E. Mayo ◽  
S.A. Dickey ◽  
A. Majerfeld ◽  
A. Sanz-Hervás ◽  
B.W. Kim
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality

High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy

1998 ◽  
Vol 195 (1-4) ◽  
pp. 524-529 ◽  
Author(s):  
I. Sagnes ◽  
I. Prévot ◽  
G. Patriarche ◽  
G. Le Roux ◽  
B. Gayral ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality

Tensile‐strained GaAsP/AlGaAs quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1995 ◽  
Vol 78 (5) ◽  
pp. 3517-3519 ◽  
Author(s):  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Ryoichi Ito ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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