Growth temperature dependence of AlGaAs spontaneous vertical quantum wells on V-grooved substrates by low-pressure metalorganic vapor phase epitaxy

1996 ◽  
Vol 158 (3) ◽  
pp. 205-209 ◽  
Author(s):  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Yasuhiro Shiraki ◽  
Ryoichi Ito
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Growth Temperature Dependence

scholarly journals Growth Temperature Dependence of Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy

2010 ◽  
Vol 59 (9) ◽  
pp. 671-674
Author(s):  
Atsushi NISHIKAWA ◽  
Takashi KAWASAKI ◽  
Naoki FURUKAWA ◽  
Yoshikazu TERAI ◽  
Yasufumi FUJIWARA
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Temperature Dependence

Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Tensile‐strained GaAsP/AlGaAs quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1995 ◽  
Vol 78 (5) ◽  
pp. 3517-3519 ◽  
Author(s):  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Ryoichi Ito ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 39 (Part 2, No. 2B) ◽  
pp. L143-L145 ◽  
Author(s):  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Masayoshi Kosaki ◽  
Yohei Yukawa ◽  
Shigeo Yamaguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
In Doping

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped
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