Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Tensile‐strained GaAsP/AlGaAs quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1995 ◽  
Vol 78 (5) ◽  
pp. 3517-3519 ◽  
Author(s):  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Ryoichi Ito ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Electronic and optical properties of periodically Si δ-doped InP grown by low pressure metalorganic vapor phase epitaxy

1997 ◽  
Vol 82 (4) ◽  
pp. 1700-1705 ◽  
Author(s):  
P. L. Souza ◽  
B. Yavich ◽  
M. Pamplona-Pires ◽  
A. B. Henriques ◽  
L. C. D. Gonçalves
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Electronic And Optical Properties

Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 39 (Part 2, No. 2B) ◽  
pp. L143-L145 ◽  
Author(s):  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Masayoshi Kosaki ◽  
Yohei Yukawa ◽  
Shigeo Yamaguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
In Doping
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