A reflection high-energy electron diffraction study of growth processes at step edges during molecular beam epitaxy of GaAs and AlAs

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90952-2 ◽

1991 ◽

Vol 111 (1-4) ◽

pp. 88-92 ◽

Author(s):

Hiroshi Tsuda ◽

Takashi Mizutani

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Growth Processes ◽

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A reflection high‐energy electron diffraction study of the Si(111) surface during gas source molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.350572 ◽

1992 ◽

Vol 71 (10) ◽

pp. 5168-5172 ◽

Author(s):

W. K. Liu ◽

S. M. Mokler ◽

N. Ohtani ◽

J. Zhang ◽

B. A. Joyce

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

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Publisher’s Note: “Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy” [J. Appl. Phys. 110, 023505 (2011)]

Journal of Applied Physics ◽

10.1063/1.3659731 ◽

2011 ◽

Vol 110 (9) ◽

pp. 099901

Author(s):

Dillip K. Satapathy ◽

Bernd Jenichen ◽

Klaus H. Ploog ◽

Wolfgang Braun

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.3606469 ◽

2011 ◽

Vol 110 (2) ◽

pp. 023505 ◽

Author(s):

Dillip K. Satapathy ◽

Bernd Jenichen ◽

Klaus H. Ploog ◽

Wolfgang Braun

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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Time-resolved reflection high energy electron diffraction study of dynamical surface processes during molecular beam epitaxy of GaAs and AlAs

Journal of Crystal Growth ◽

10.1016/0022-0248(94)00556-7 ◽

1995 ◽

Vol 146 (1-4) ◽

pp. 344-348 ◽

Author(s):

S.Yu. Karpov ◽

V.E. Myachin ◽

Yu.V. Pogorelsky

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

Surface Processes ◽

High Energy Electron ◽

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Reflection high-energy electron diffraction study of the GaSb surface during molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587065 ◽

1994 ◽

Vol 12 (2) ◽

pp. 1133 ◽

Author(s):

Mitsuaki Yano

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study

Applied Surface Science ◽

10.1016/s0169-4332(98)00087-7 ◽

1998 ◽

Vol 130-132 ◽

pp. 382-386 ◽

Author(s):

A. Shen ◽

H. Ohno ◽

Y. Horikoshi ◽

S.P. Guo ◽

Y. Ohno ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Low Temperature ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Low Temperature Gaas

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Reflection high-energy electron diffraction study of the growth of NiO and CoO thin films by molecular beam epitaxy

Surface Science ◽

10.1016/0039-6028(94)91283-1 ◽

1994 ◽

Vol 301 (1-3) ◽

pp. 11-18 ◽

Author(s):

S.D. Peacor ◽

T. Hibma

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr2O3 on Si(001)

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.12.083 ◽

2006 ◽

Vol 290 (1) ◽

pp. 73-79 ◽

Author(s):

Xiangxin Guo ◽

Wolfgang Braun ◽

Bernd Jenichen ◽

Klaus H. Ploog

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron

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Reflection high‐energy electron‐diffraction study of metalorganic molecular‐beam epitaxy of GaAs using trimethylgallium and arsenic

Journal of Applied Physics ◽

10.1063/1.344914 ◽

1990 ◽

Vol 67 (9) ◽

pp. 4393-4395 ◽

Author(s):

B. W. Liang ◽

T. P. Chin ◽

C. W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Metalorganic Molecular Beam Epitaxy

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Reflection high-energy electron diffraction study of Sb incorporation during molecular-beam epitaxy growth of GaSb and AlSb

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586146 ◽

1992 ◽

Vol 10 (2) ◽

pp. 895 ◽

Author(s):

James R. Waterman

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron

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