Reflection high‐energy electron‐diffraction study of metalorganic molecular‐beam epitaxy of GaAs using trimethylgallium and arsenic
1991 ◽
Vol 111
(1-4)
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pp. 88-92
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1995 ◽
Vol 146
(1-4)
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pp. 344-348
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1994 ◽
Vol 12
(2)
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pp. 1133
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1998 ◽
Vol 130-132
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pp. 382-386
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2006 ◽
Vol 290
(1)
◽
pp. 73-79
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1992 ◽
Vol 10
(2)
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pp. 895
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