MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structures

1993 ◽  
Vol 127 (1-4) ◽  
pp. 541-545 ◽  
Author(s):  
E.C. Larkins ◽  
W. Rothemund ◽  
M. Maier ◽  
Z.M. Wang ◽  
J.D. Ralston ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
Growth Optimization

MBE growth and characterization of high-quality strained multiple quantum well structures

1997 ◽  
Vol 175-176 ◽  
pp. 873-876 ◽  
Author(s):  
A.Z. Li ◽  
Y. Zhao ◽  
Y.L. Zheng ◽  
G.T. Chen ◽  
G.P. Ru ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Mbe Growth ◽  
Quantum Well Structures

Electroabsorption of Unstrained InGaAs/InAlGaAs Multiple Quantum Well Structure Grown on GaAs Substrates

1997 ◽  
Vol 08 (04) ◽  
pp. 587-598 ◽  
Author(s):  
Ching-Ting Lee ◽  
Tzer-En Nee
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
Practical Applications ◽  
Gaas Substrates ◽  
Speed Modulation

Large electroabsorption was observed in InGaAs/InAlGaAs multiple quantum well structures grown on GaAs substrates operating near 1.3 μm. The molecular beam epitaxy (MBE) growth of these structures was incorporation of a carefully designed InAlAs multistage strain-relaxed buffer. The optical absorption spectra as a function of the reverse bias at room temperature are shown. The good characteristics of the optical modulators fabricated on this structure have indicated its potential for practical applications of high-speed modulation.

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Visible-wavelength laser action of ZnCdO∕(Zn,Mg)O multiple quantum well structures

2007 ◽  
Vol 91 (23) ◽  
pp. 231103 ◽  
Author(s):  
S. Sadofev ◽  
S. Kalusniak ◽  
J. Puls ◽  
P. Schäfer ◽  
S. Blumstengel ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Action ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Visible Wavelength
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