Metalorganic vapor phase epitaxy growth of InGaP using tertiarybutylphosphine and its application to selective regrowth of current blocking layers of laser diodes

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91065-0 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 291-296

Author(s):

M. Horita ◽

M. Usami ◽

Y. Matsushima

Keyword(s):

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Current Blocking

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Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1234 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1234-1238 ◽

Author(s):

Yuji Furushima ◽

Hiroyuki Yamazaki ◽

Koji Kudo ◽

Yasutaka Sakata ◽

Yuichiro Okunuki ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Laser Diodes ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Power Characteristics ◽

Heterostructure Laser ◽

Buried Heterostructure

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Real index-guided AlGaInP visible laser with high-bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/2944.401263 ◽

1995 ◽

Vol 1 (2) ◽

pp. 723-727 ◽

Author(s):

R. Kobayashi ◽

H. Hotta ◽

F. Miyasaka ◽

K. Hara ◽

K. Kobayashi

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Bandgap Energy ◽

Blocking Layer ◽

Visible Laser ◽

Current Blocking Layer ◽

Current Blocking

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New structure by selective regrowth in multi-quantum well laser diodes performed by low pressure metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91155-x ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 866-874 ◽

Author(s):

Nobuyuki Otsuka ◽

Masahiro Kito ◽

Yoshihiro Mori ◽

Masato Ishino ◽

Yasushi Matsui

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Laser Diodes ◽

Low Pressure ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Laser ◽

Multi Quantum Well

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Real index guided AlGaInP visible laser with high bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy

Proceedings of IEEE 14th International Semiconductor Laser Conference ISLC-94 ◽

10.1109/islc.1994.519354 ◽

2002 ◽

Author(s):

R. Kobayashi ◽

H. Hotta ◽

F. Miyasaka ◽

K. Hara ◽

K. Kobayashi

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Bandgap Energy ◽

Blocking Layer ◽

Visible Laser ◽

Current Blocking Layer ◽

Current Blocking

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Fabrication of AlxGa1-xAs buried heterostructure laser diodes by in-situ gas etching and selective-area metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91157-6 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 881-885 ◽

Author(s):

Y. Inoue ◽

K. Shimoyama ◽

K. Fujii ◽

N. Hosoi ◽

H. Gotoh

Keyword(s):

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area ◽

Heterostructure Laser ◽

Buried Heterostructure

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AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1987.1073424 ◽

1987 ◽

Vol 23 (6) ◽

pp. 704-711 ◽

Author(s):

K. Kobayashi ◽

I. Hino ◽

A. Gomyo ◽

S. Kawata ◽

T. Suzuki

Keyword(s):

Visible Light ◽

Active Layer ◽

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Double Heterostructure

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Monolithically integrated multi-wavelength MQW-DBR laser diodes fabricated by selective metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91152-5 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 846-851 ◽

Author(s):

Tatsuya Sasaki ◽

Masayuki Yamaguchi ◽

Mitsuhiro Kitamura

Keyword(s):

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Monolithically Integrated ◽

Multi Wavelength

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All selective metalorganic vapor phase epitaxy grown buried-heterostructure laser diodes with selectively oxidized AlInAs current-confinement layer

Applied Physics Letters ◽

10.1063/1.1313374 ◽

2000 ◽

Vol 77 (13) ◽

pp. 1934-1936

Author(s):

Hyun-Chul Ko ◽

Takahiro Nakamura ◽

Tomoaki Koui ◽

Naofumi Suzuki ◽

Kazuhiro Shiba ◽

...

Keyword(s):

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Heterostructure Laser ◽

Current Confinement ◽

Buried Heterostructure

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Spectral linewidth reduction in metalorganic vapor phase epitaxy grown 1.5 μm separate‐confinement‐heterostructure quantum well distributed feedback laser diodes

Applied Physics Letters ◽

10.1063/1.100307 ◽

1988 ◽

Vol 53 (21) ◽

pp. 2019-2020 ◽

Author(s):

Shinji Takano ◽

Tatsuya Sasaki ◽

Hirohito Yamada ◽

Mitsuhiro Kitamura ◽

Ikuo Mito

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Distributed Feedback ◽

Distributed Feedback Laser ◽

Spectral Linewidth

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Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91158-4 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 886-891 ◽

Author(s):

M. Horita ◽

M. Tsurusawa ◽

K. Utaka ◽

Y. Matsushima

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Laser ◽

Multi Quantum Well

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