Fabrication of AlxGa1-xAs buried heterostructure laser diodes by in-situ gas etching and selective-area metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91157-6 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 881-885 ◽

Author(s):

Y. Inoue ◽

K. Shimoyama ◽

K. Fujii ◽

N. Hosoi ◽

H. Gotoh

Keyword(s):

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area ◽

Heterostructure Laser ◽

Buried Heterostructure

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Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1234 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1234-1238 ◽

Author(s):

Yuji Furushima ◽

Hiroyuki Yamazaki ◽

Koji Kudo ◽

Yasutaka Sakata ◽

Yuichiro Okunuki ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Laser Diodes ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Power Characteristics ◽

Heterostructure Laser ◽

Buried Heterostructure

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All selective metalorganic vapor phase epitaxy grown buried-heterostructure laser diodes with selectively oxidized AlInAs current-confinement layer

Applied Physics Letters ◽

10.1063/1.1313374 ◽

2000 ◽

Vol 77 (13) ◽

pp. 1934-1936

Author(s):

Hyun-Chul Ko ◽

Takahiro Nakamura ◽

Tomoaki Koui ◽

Naofumi Suzuki ◽

Kazuhiro Shiba ◽

...

Keyword(s):

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Heterostructure Laser ◽

Current Confinement ◽

Buried Heterostructure

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Novel in situ optical monitoring method for selective area metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(96)00287-4 ◽

1996 ◽

Vol 167 (3-4) ◽

pp. 434-439 ◽

Author(s):

Yasuhiko Ishikawa ◽

Kazuaki Nakakoshi ◽

Takashi Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Optical Monitoring ◽

Monitoring Method ◽

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Fabrication of quantum wire structures by in-situ gas etching and selective-area metalorganic vapor phase epitaxy regrowth

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91135-5 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 734-739 ◽

Author(s):

K. Shimoyama ◽

S. Nagao ◽

Y. Inoue ◽

K. Kiyomi ◽

N. Hosoi ◽

...

Keyword(s):

Vapor Phase ◽

Quantum Wire ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

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Corrigendum to: Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy [J. Cryst. Growth 407 (2014) 68–73]

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2015.02.088 ◽

2015 ◽

Vol 418 ◽

pp. 185

Author(s):

Guangxu Ju ◽

Shingo Fuchi ◽

Masao Tabuchi ◽

Hiroshi Amanoa ◽

Yoshikazu Takeda

Keyword(s):

Epitaxial Growth ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205438 ◽

2003 ◽

Author(s):

T. Tsuchiya ◽

J. Shimizu ◽

M. Shirai ◽

M. Aoki

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Inp Substrate ◽

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A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.1992665 ◽

2005 ◽

Vol 87 (3) ◽

pp. 033501 ◽

Author(s):

Yoshihito Miyoshi ◽

Fumito Nakajima ◽

Junichi Motohisa ◽

Takashi Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Binary Decision Diagram ◽

Single Electron ◽

Single Electron Transistors ◽

Binary Decision ◽

Selective Area ◽

Electron Transistors

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1.55 ?m spot-size converter integrated-laser diode fabricated by selective-area metalorganic vapor-phase epitaxy

Microwave and Optical Technology Letters ◽

10.1002/(sici)1098-2760(20000605)25:5<300::aid-mop4>3.0.co;2-s ◽

2000 ◽

Vol 25 (5) ◽

pp. 300-302 ◽

Author(s):

Hyun-Soo Kim ◽

Dae Kon Oh ◽

Moon-Ho Park ◽

Nam Hwang ◽

In-Hoon Choi

Keyword(s):

Laser Diode ◽

Vapor Phase ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

Applied Physics Express ◽

10.7567/apex.6.025502 ◽

2013 ◽

Vol 6 (2) ◽

pp. 025502 ◽

Author(s):

Yoshinori Kohashi ◽

Shinya Sakita ◽

Shinjiroh Hara ◽

Junichi Motohisa

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Nanowire Arrays ◽

Independent Realization ◽

Selective Area ◽

Growth Method ◽

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