Real index-guided AlGaInP visible laser with high-bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy

1995 ◽  
Vol 1 (2) ◽  
pp. 723-727 ◽  
Author(s):  
R. Kobayashi ◽  
H. Hotta ◽  
F. Miyasaka ◽  
K. Hara ◽  
K. Kobayashi
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Bandgap Energy ◽  
Blocking Layer ◽  
Visible Laser ◽  
Current Blocking Layer ◽  
Current Blocking

One‐step‐metalorganic‐vapor‐phase‐epitaxy‐grown AlGaInP visible laser using simultaneous impurity doping

1993 ◽  
Vol 63 (13) ◽  
pp. 1736-1738 ◽  
Author(s):  
C. Anayama ◽  
H. Sekiguchi ◽  
M. Kondo ◽  
H. Sudo ◽  
T. Fukushima ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Visible Laser ◽  
Impurity Doping ◽  
One Step

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 97 (1) ◽  
pp. 013502 ◽  
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Shang-Ju Tu ◽  
Chih-Ciao Yang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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