Optically detected magnetic resonance in hydrogen effused a-Si:H : Role of dangling bond centres in the low energy luminescence

1983 ◽  
Vol 59-60 ◽  
pp. 357-360 ◽  
Author(s):  
M. Yoshida ◽  
K. Morigaki
1989 ◽  
Vol 163 ◽  
Author(s):  
W.M. Chen ◽  
O.O. Awadelkarim ◽  
B. Monemar ◽  
J.L. Lindström ◽  
G.S. Oehrlein

AbstractWe present for the first time an optically detected magnetic resonance (ODMR) study of a hydrogen-related defect in silicon. The defect is present in hydrogenated boron-doped silicon single crystals, after room-temperature electron-irradiation. A spin-triplet (S=1) is shown to be the electronic state responsible for the observed ODMR spectrum. An angular dependence study of the ODMR spectrum reveals a C2v defect symmetry. The defect model is discussed in terms of a di-hydrogen-vacancy complex. The role of this defect as an efficient recombination channel (presumably non-radiative) for the non-equilibrium free carriers is also demonstrated.


1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.


1985 ◽  
Vol 32 (4) ◽  
pp. 2273-2284 ◽  
Author(s):  
K. M. Lee ◽  
Le Si Dang ◽  
G. D. Watkins ◽  
W. J. Choyke

1997 ◽  
Vol 6 (10) ◽  
pp. 1381-1384 ◽  
Author(s):  
N.T. Son ◽  
E. Sörman ◽  
W.M. Chen ◽  
C. Hallin ◽  
O. Kordina ◽  
...  

1992 ◽  
Vol 270 ◽  
Author(s):  
P. A. Lane ◽  
L. S. Swanson ◽  
Q.-X. Ni ◽  
J. Shinar ◽  
J Engel ◽  
...  

ABSTRACTThe photoluminescence (PL), X-band ODMR. and LESR of C60 films and C60 isolated in a toluene/polystyrene glass matrix (C60:T/PS) is described. The delocalized triplet LESR and ODMR of C60:T/PS are similar to previously reported LESR. In films, however, the ODMR indicates that the delocalized triplet is larger and distorted by neighboring molecules. In addition, another, localized triplet, and a narrow PL-enhancing line at g = 2.0017 ± 0.0005 are observed. These features are similar to those observed in several π-conjugated polymers. The former is attributed to a localized triplet of size similar to a 5- or 6-membered ring, tentatively on a face adjacent to another C60 molecule; the latter is believed to result from intermolecular polaron recombination.


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