Neutron irradiation of superconducting compounds

1978 ◽  
Vol 72 (1-2) ◽  
pp. 50-69 ◽  
Author(s):  
A.R. Sweedler ◽  
D.E. Cox ◽  
S. Moehlecke
Keyword(s):  
Neutron Irradiation ◽  
Superconducting Compounds

Voids in Irradiated Tungsten and Molybdenum

1969 ◽  
Vol 27 ◽  
pp. 190-191
Author(s):  
Robert C. Rau ◽  
Robert L. Ladd
Keyword(s):  
Melting Point ◽  
Fast Neutron ◽  
Neutron Irradiation ◽  
Elevated Temperatures ◽  
Irradiation Temperature ◽  
The Body ◽  
Face Centered Cubic ◽  
Body Centered Cubic ◽  
Cubic Metals ◽  
Face Centered

Recent studies have shown the presence of voids in several face-centered cubic metals after neutron irradiation at elevated temperatures. These voids were found when the irradiation temperature was above 0.3 Tm where Tm is the absolute melting point, and were ascribed to the agglomeration of lattice vacancies resulting from fast neutron generated displacement cascades. The present paper reports the existence of similar voids in the body-centered cubic metals tungsten and molybdenum.

Some properties of superconducting compounds of the V3Si type

1967 ◽  
Vol 91 (1) ◽  
pp. 113-120 ◽  
Author(s):  
A.P. Levanyuk ◽  
Robert A. Suris
Keyword(s):  
Superconducting Compounds

Unusual response of the binary V-2Si alloy to neutron irradiation in FFTF at 430-600{degrees}C

1996 ◽  
Author(s):  
S Ohnuki ◽  
H Konoshita ◽  
H Takahaski ◽  
F A Garner
Keyword(s):  
Neutron Irradiation

The Effect of Neutron Irradiation on the Fertility of Tribolium confusum

1961 ◽  
Vol 95 (881) ◽  
pp. 124-126
Author(s):  
Daniel J. McDonald ◽  
Howard C. Long
Keyword(s):  
Neutron Irradiation ◽  
Tribolium Confusum

Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystallization Kinetics ◽  
Neutron Irradiation ◽  
Onset Temperature ◽  
Kinetics Of Crystallization ◽  
Crystallization Onset Temperature ◽  
Crystallization Onset ◽  
Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

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