Sensitivity in trace-element analysis by p, α and 16O induced X-rays

1974 ◽  
Vol 119 ◽  
pp. 117-123 ◽  
Author(s):  
F. Folkmann ◽  
J. Borggreen ◽  
A. Kjeldgaard
2011 ◽  
Vol 17 (6) ◽  
pp. 903-910 ◽  
Author(s):  
Nicholas W.M. Ritchie ◽  
Dale E. Newbury ◽  
Abigail P. Lindstrom

AbstractArtifacts are the nemesis of trace element analysis in electron-excited energy dispersive X-ray spectrometry. Peaks that result from nonideal behavior in the detector or sample can fool even an experienced microanalyst into believing that they have trace amounts of an element that is not present. Many artifacts, such as the Si escape peak, absorption edges, and coincidence peaks, can be traced to the detector. Others, such as secondary fluorescence peaks and scatter peaks, can be traced to the sample. We have identified a new sample-dependent artifact that we attribute to Compton scattering of energetic X-rays generated in a small feature and subsequently scattered from a low atomic number matrix. It seems likely that this artifact has not previously been reported because it only occurs under specific conditions and represents a relatively small signal. However, with the advent of silicon drift detectors and their utility for trace element analysis, we anticipate that more people will observe it and possibly misidentify it. Though small, the artifact is not inconsequential. Under some conditions, it is possible to mistakenly identify the Compton scatter artifact as approximately 1% of an element that is not present.


1976 ◽  
Vol 134 (1) ◽  
pp. 189-196 ◽  
Author(s):  
M. Barrette ◽  
G. Lamoureux ◽  
E. Lebel ◽  
R. Lecomte ◽  
P. Paradis ◽  
...  

1975 ◽  
Vol 126 (1) ◽  
pp. 75-80 ◽  
Author(s):  
K. Ishii ◽  
S. Morita ◽  
H. Tawara ◽  
T.C. Chu ◽  
H. Kaji ◽  
...  

1972 ◽  
Vol 12 (2) ◽  
pp. 171-179 ◽  
Author(s):  
J. W. Verba ◽  
J. W. Sunier ◽  
B. T. Wright ◽  
I. Slaus ◽  
A. B. Holman ◽  
...  

1991 ◽  
Vol 35 (B) ◽  
pp. 899-923 ◽  
Author(s):  
Andreas Prange ◽  
Heinrich Schwenke

AbstractFor the application of TXRF in trace element analysis, two characteristic features of the total reflection of X-rays are exploited. These are the high reflectivity on flat surfaces and the low penetration depth of the primary radiation. This allows the application of TXRF for both chemical trace and ultra-trace element analysis on the one hand and surface analysis on the other. For chemical trace clement analysis, total reflection on a highly polished substrate is characterized by a high reflectivity, which leads to a drastic reduction of the spectral background. The sample to be analyzed is prepared on the substrate as a residue of small quantities by evaporation from solutions or fine-grained suspensions. Instrumental detection limits of a few pg or sub-ng/ ml−1 arc state of the art for commercially available equipment. Besides the high detection power, internal standardization is another important feature of TXRF, enabling very simple quantification of the detected elements. The small sample mass required enables especially ultra-micro analytical questions to be tackled. For trace element analysis in surfaces the low penetration depth of the primary radiation under the conditions of total reflection is exploited. The penetration depth is in the range of a few nanometers, hence, TXRF is intrinsically surface sensitive. Detection limits better than 1010 atoms/cm2 are obtained for metal impurities on silicon wafers. For the examination of layered structures elemental composition, layer thickness, and density can be derived from die angle-dependent fluorescence intensities. The present paper describes the basic features of the total reflection of X-rays and gives some representative examples of the different uses of TXRF in trace element analysis.


1979 ◽  
Vol 54 (1-2) ◽  
pp. 191-203 ◽  
Author(s):  
G. J. Stock ◽  
J. B. Cross ◽  
E. A. Schweikert

Sign in / Sign up

Export Citation Format

Share Document