Low-spin → high-spin state transition in high pressure cobalt sesquioxide

1971 ◽  
Vol 9 (13) ◽  
pp. 1057-1060 ◽  
Author(s):  
J. Chenavas ◽  
J.C. Joubert ◽  
M. Marezio
2000 ◽  
Vol 84 (13) ◽  
pp. 2969-2972 ◽  
Author(s):  
T. Vogt ◽  
P. M. Woodward ◽  
P. Karen ◽  
B. A. Hunter ◽  
P. Henning ◽  
...  

2003 ◽  
pp. 359-363
Author(s):  
V. J. Cornelius ◽  
P. J. Titler ◽  
G. R. Fern ◽  
J. R. Miller ◽  
J. Silver ◽  
...  

2017 ◽  
Vol 5 (44) ◽  
pp. 11598-11604
Author(s):  
Hua Hao ◽  
Ting Jia ◽  
Xiaohong Zheng ◽  
Lingling Song ◽  
Zhi Zeng

Complexes in the ground state with high-spin magnetic ions (3d5/3d4) can be used to realize the electrically-induced spin-state transition and build room-temperature molecular transistors or memory devices.


2004 ◽  
Vol 73 (7) ◽  
pp. 1987-1997 ◽  
Author(s):  
Toshiaki Fujita ◽  
Takeshi Miyashita ◽  
Yukio Yasui ◽  
Yoshiaki Kobayashi ◽  
Masatoshi Sato ◽  
...  

1996 ◽  
Vol 53 (6) ◽  
pp. R2926-R2929 ◽  
Author(s):  
S. Yamaguchi ◽  
Y. Okimoto ◽  
H. Taniguchi ◽  
Y. Tokura

1987 ◽  
Vol 58 (17) ◽  
pp. 1784-1787 ◽  
Author(s):  
E. Kisker ◽  
E. F. Wassermann ◽  
C. Carbone

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