Realizing bias-induced spin transition with high-spin MnII complexes at room temperature
Keyword(s):
Complexes in the ground state with high-spin magnetic ions (3d5/3d4) can be used to realize the electrically-induced spin-state transition and build room-temperature molecular transistors or memory devices.
1990 ◽
Vol 167
(4)
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pp. 367-370
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1971 ◽
Vol 9
(13)
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pp. 1057-1060
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2013 ◽
Vol 117
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pp. 11459-11470
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2000 ◽
Vol 84
(13)
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pp. 2969-2972
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1997 ◽
Vol 255
(1)
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pp. 181-184
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2010 ◽
Vol 24
(16)
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pp. 1785-1790
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1996 ◽
Vol 53
(6)
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pp. R2926-R2929
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1987 ◽
Vol 58
(17)
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pp. 1784-1787
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