Observation of a triclinic lattice distortion of InxGa1−xAs (100)-oriented epitaxial layers by high-resolution double-crystal X-ray diffraction

AbstractDouble Crystal X-Ray Diffraction (DCD) is often used to determine the Al content of AlxGa1-xAs/GaAs epitaxial layers. Assessing composition from a measurement of mismatch is problematic because it invokes a number of assumptions. This study bypasses these difficulties by comparing the measurement of mismatch directly with Al composition measurements made by electronprobe microanalysis. A study of coherent epitaxial AlxGa1-xAs layers showed that mismatch varies linearly with composition. The equation Al (x) = |ΔΘ| / 368 summarizes the relationship over the coherent range, where |ΔΘ| is measured in arc seconds.

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High-resolution double-crystal x-ray diffraction for improved assessment of modulated semiconductor structures

Surface Science Letters ◽

10.1016/0167-2584(86)90018-6 ◽

1986 ◽

Vol 174 (1-3) ◽

pp. A427

Author(s):

L. Tapfer ◽

W. Stolz ◽

A. Fischer ◽

K. Ploog

Keyword(s):

High Resolution ◽

X Ray Diffraction ◽

Double Crystal ◽

X Ray ◽

Semiconductor Structures

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X-Ray Characterisation of Boron Delta Layers in Si and SiGe

MRS Proceedings ◽

10.1557/proc-220-115 ◽

1991 ◽

Vol 220 ◽

Cited By ~ 6

Author(s):

A. R. Powell ◽

R. A. Kubiak ◽

T. E. Whall ◽

E. H. C. Parker ◽

D. K. Bowen

Keyword(s):

High Temperature ◽

Epitaxial Layers ◽

X Ray Diffraction ◽

Double Crystal ◽

X Ray ◽

Carrier Confinement ◽

Delta Layer ◽

Non Destructive ◽

Sheet Density

ABSTRACTWe demonstrate the growth, by MBE, of high sheet density B delta layers in both Si and SiGe epitaxial layers. Double Crystal X-Ray Diffraction is shown to be a non-destructive method of characterising the width of very narrow (0.3 nm) delta layers and the sheet density of the activated B. The ability of delta layers to withstand high temperature anneals is considered and it is found that a 750 °C anneal for 1 hour broadens the delta layer to beyond the width required for carrier confinement.

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Determination of The State of Deformation in Epitaxial Layers Using High Resolution X-Ray Diffraction

MRS Proceedings ◽

10.1557/proc-319-123 ◽

1993 ◽

Vol 319 ◽

Author(s):

P.J. Dugdale ◽

R.C. Pond ◽

S.J. Barnett

Keyword(s):

High Resolution ◽

The State ◽

Epitaxial Layers ◽

Misfit Dislocations ◽

X Ray Diffraction ◽

X Ray ◽

Additional Information ◽

Transmission Electron ◽

Dislocation Densities

AbstractThe state of deformation in epitaxial layers of InGaAs grown by MBE on GaAs substrates has been determined using high resolution X-ray diffraction. This method enables the strains and rigid body rotations which occur in the layers to be measured and these are described by means of a tensor. Layers of different thicknesses have been grown on substrates whose dislocation densities differ by three orders of magnitude in order to assess the influence of this parameter on layer relaxation through the motion of misfit dislocations to the interface. Transmission electron microscopy has also been used to provide additional information on the relaxations.

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