High Resolution Double-Crystal X-ray Diffraction Imaging for Interfacial Defect Detection in Bonded Wafers.

Abstract Both double-crystal and triple-axis x-ray diffraction techniques have been used to study complex SiGe/Si structures. A novel method for measuring the nucleation activation energy of dislocations in strain relaxed SiGe/Si structures is presented to illustrate the usefulness of these techniques.

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X-ray fan beam coded aperture transmission and diffraction imaging for fast material analysis

Scientific Reports ◽

10.1038/s41598-021-90163-0 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Stefan Stryker ◽

Joel A. Greenberg ◽

Shannon J. McCall ◽

Anuj J. Kapadia

Keyword(s):

High Resolution ◽

Spatial Resolution ◽

Imaging System ◽

Coded Aperture ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Imaging ◽

Diffraction Imaging ◽

Non Destructive ◽

Ray Methods

AbstractX-ray transmission imaging has been used in a variety of applications for high-resolution measurements based on shape and density. Similarly, X-ray diffraction (XRD) imaging has been used widely for molecular structure-based identification of materials. Combining these X-ray methods has the potential to provide high-resolution material identification, exceeding the capabilities of either modality alone. However, XRD imaging methods have been limited in application by their long measurement times and poor spatial resolution, which has generally precluded combined, rapid measurements of X-ray transmission and diffraction. In this work, we present a novel X-ray fan beam coded aperture transmission and diffraction imaging system, developed using commercially available components, for rapid and accurate non-destructive imaging of industrial and biomedical specimens. The imaging system uses a 160 kV Bremsstrahlung X-ray source while achieving a spatial resolution of ≈ 1 × 1 mm2 and a spectral accuracy of > 95% with only 15 s exposures per 150 mm fan beam slice. Applications of this technology are reported in geological imaging, pharmaceutical inspection, and medical diagnosis. The performance of the imaging system indicates improved material differentiation relative to transmission imaging alone at scan times suitable for a variety of industrial and biomedical applications.

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Observation of a triclinic lattice distortion of InxGa1−xAs (100)-oriented epitaxial layers by high-resolution double-crystal X-ray diffraction

Solid State Communications ◽

10.1016/0038-1098(94)90562-2 ◽

1994 ◽

Vol 91 (8) ◽

pp. 635-638 ◽

Cited By ~ 14

Author(s):

C. Giannini ◽

L. De Caro ◽

L. Tapfer

Keyword(s):

High Resolution ◽

Lattice Distortion ◽

Epitaxial Layers ◽

X Ray Diffraction ◽

Double Crystal ◽

X Ray

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Heterostructural Characterization of Pseudomorphic, Partially Strained, and Highly Mismatched Semiconductors Using Double Crystal X-Ray Diffraction, TEM, and SEM

MRS Proceedings ◽

10.1557/proc-340-343 ◽

1994 ◽

Vol 340 ◽

Author(s):

Hyung Mun Kim ◽

Sang-Gi Kim ◽

Sahn Nahm ◽

Hyung-Ho Park ◽

Hae-Kwon Lee ◽

...

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Lattice Mismatch ◽

Strain Relaxation ◽

X Ray Diffraction ◽

Gaas Sample ◽

Double Crystal ◽

Cross Sectional ◽

X Ray ◽

Peak Broadening

ABSTRACTHeterostructural properties of pseudomorphic (AlGaAs/GaAs), partially strained (GaInAs/GaAs), and highly strained (GaAs/Si) semiconductor systems have been studied using High Resolution Double-Crystal X-ray Diffraction (DXRD), Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM). Using the high resolution DXRD with CuKα1 and two-reflection Si (220) monochromator, we obtained (004) symmetric and (115) or (224) asymmetric reflection rocking curves for samples grown by molecular beam epitaxy. With 0.5 μm thick samples, perpendicular and in-plane lattice mismatches were calculated using elastic theory and compared with each other. The different degree of relaxation for these samples was observed and correlated with the lattice mismatch, X-ray layer peak broadening (i.e., full width at half maximum), and SEM surface morphology. For a GaInAs/GaAs sample, the strain relaxation along one of the <110> directions was more than the other direction, that is, the strain relaxation is not isotrophic. Also we observed that the lines were mainly parallel in one direction, i.e., they did not form a cross-hatch pattern. TEM images from both cross-sectional and planar views of the samples will be presented.

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