The preparation of high purity gallium arsenide by the Czochralski method

1966 ◽  
Vol 9 (8) ◽  
pp. 828-830 ◽  
Author(s):  
W.K. Liebmann ◽  
G. Kampschulte
1984 ◽  
Vol 56 (1) ◽  
pp. 58-62 ◽  
Author(s):  
P. W. Bohn ◽  
R. Bhat ◽  
T. D. Harris

2020 ◽  
Vol 1003 ◽  
pp. 247-253
Author(s):  
Zhi Xin Ma ◽  
Xiao Guo Bi ◽  
Xu Dong Liu ◽  
Xiao Dong Li ◽  
Ji Guang Li ◽  
...  

LYSO:Ce single crystal was widely manufactured by Czochralski method. Considering its high cost and the pollution of the crucible, we tried to prepare the crystal by Verneuil method. Unlike Czochralski method, the Verneuil method need the powders with excellent fluidity and high purity. By comparing the powders annealed at 1100°C,1200°C,1300°C,1400°C and 1500°C, we can obtained the needed powders at 1500°C. We also increased the content of silica to satisfy the volatilization in crystal growth process. The single crystal was prepared by changing the growth parameter. We investigated the phase and the microstructure of the powders and observed the microstucture of the crystal fracture. We discussed the improved method of the process of crystal growth.


1995 ◽  
Vol 44 (1-3) ◽  
pp. 531-535 ◽  
Author(s):  
M. Alietti ◽  
C. Canali ◽  
A. Castaldini ◽  
A. Cavallini ◽  
C. Chiossi ◽  
...  

1994 ◽  
Vol 373 ◽  
Author(s):  
R. Mih ◽  
R. Gronsky

AbstractPositron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. We present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot- Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data.


2004 ◽  
Vol 30 (10) ◽  
pp. 810-812
Author(s):  
M. V. Botnaryuk ◽  
Yu. V. Zhilyaev ◽  
T. A. Orlova ◽  
N. K. Poletaev ◽  
L. M. Fedorov ◽  
...  

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