Transmission/scanning transmission electron microscopy investigation of Au/Cr contacts to p-type InP

1988 ◽  
Vol 31 (8) ◽  
pp. 1251-1258 ◽  
Author(s):  
D.G. Ivey ◽  
R. Bruce ◽  
G.R. Piercy
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Transmission Electron Microscopy Investigation ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Electron Microscopy Investigation ◽  
Scanning Transmission ◽  
P Type

Determination of Thickness for the Individual Layer of Strained P-Type Al0.11Ga0.89NGaN Superlattice by High Angle Annular Dark Field Scanning Transmission Electron Microscopy

2010 ◽  
Vol 152-153 ◽  
pp. 879-882 ◽  
Author(s):  
Hui Liao ◽  
Wei Hua Chen ◽  
Fen Fen Wei ◽  
Juan Hou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Dark Field ◽  
High Angle ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
P Type

AlGaN/GaN superlattice are the important structure of optoelectronic devices such as light-emitting diodes and laser diodes. The nanostructure of the superlattice can greatly influences the optical electrical properties of final LD and LED . It is impossible to evaluate their thickness by TEM when it’s aluminum component lower than 14%.We investigated the nanostructure of strained p-type Al0.11Ga0.89N/GaN superlattice grown on sapphire by high-angle annular dark-field scanning transmission electron microscopy(HAADF-STEM).By an average filtering technique, the thickness of the AlGaN layers and GaN layers were determined to be 2.409±0.092 nm and 2.371±0.062 nm from the HAADF-STEM images, respectively.

Scanning Transmission Electron Microscopy of Polyethylene Crystals

1980 ◽  
Vol 38 ◽  
pp. 242-245
Author(s):  
F. Khoury ◽  
L. H. Bolz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallization Temperature ◽  
Scanning Transmission Electron Microscopy ◽  
Growth Habit ◽  
Lateral Growth ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Growth Habits

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

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