Scanning Transmission Electron Microscopy of Polyethylene Crystals

Author(s):  
F. Khoury ◽  
L. H. Bolz

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Koji Inoue ◽  
Kenta Yoshida ◽  
Yasuyoshi Nagai ◽  
Kyosuke Kishida ◽  
Haruyuki Inui

AbstractAtom probe tomography (APT) and transmission electron microscopy (TEM)/scanning transmission electron microscopy (STEM) have been used correlatively to explore atomic-scale local structure and chemistry of the exactly same area in the vicinity of growth front of a long-period stacking ordered (LPSO) phase in a ternary Mg–Al–Gd alloy. It is proved for the first time that enrichment of Gd atoms in four consecutive (0001) atomic layers precedes enrichment of Al atoms so that the formation of Al6Gd8 clusters occurs only after sufficient Al atoms to form Al6Gd8 clusters diffuse into the relevant portions. Lateral growth of the LPSO phase is found to occur by ‘ledge’ mechanism with the growth habit plane either {1$$\overline{1}$$ 1 ¯ 00} or {11$$\overline{2}$$ 2 ¯ 0} planes. The motion of ledges that give rise to lateral growth of the LPSO phase is considered to be controlled by diffusion of Al atoms.


2000 ◽  
Vol 638 ◽  
Author(s):  
Alan D.F. Dunbar ◽  
Matthew P. Halsall ◽  
Uschi Bangert ◽  
Alan Harvey ◽  
Philip Dawson ◽  
...  

AbstractWe report optical and scanning transmission electron microscopy studies of germanium dots grown on silicon. In an attempt to control the self-organized growth process and promote dot size uniformity the dot layers were grown on a 4.5nm Si0.6Ge0.4 alloy template layer. Photoluminescence results indicate the formation of carrier confining Ge rich islands, whilst Raman scattering results indicate the presence of an alloy throughout the structures formed. The samples were studied in the UK high resolution scanning transmission electron microscopy facility at Liverpool, UK. Energy dispersive analysis of individual line scans through the sample show that the structures are composed of an alloy throughout with an asymmetric distribution of Germanium in the dots and in the wetting layer close to the dots. We discuss the results in the light of the proposed growth mode for these dots and conclude that attempts to manipulate the composition of these dots during growth may be problematic due to the self-organized nature of their formation.


2010 ◽  
Vol 16 (S2) ◽  
pp. 1116-1117
Author(s):  
PJ Kempen ◽  
AS Thakor ◽  
CL Zavaleta ◽  
SS Gambhir ◽  
R Sinclair

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2010 ◽  
Vol 16 (S2) ◽  
pp. 80-81 ◽  
Author(s):  
SD Findlay ◽  
N Shibata ◽  
H Sawada ◽  
E Okunishi ◽  
Y Kondo ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


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