Electronic Raman scattering on highly doped single quantum wells

1992 ◽  
Vol 263 (1-3) ◽  
pp. 527-530 ◽  
Author(s):  
B. Jusserand ◽  
D. Richards ◽  
B. Etienne ◽  
H. Peric ◽  
G. Fasol
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Quantum ◽  
Electronic Raman Scattering

scholarly journals Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations

2004 ◽  
Vol 70 (15) ◽  
Author(s):  
Takeya Unuma ◽  
Kensuke Kobayashi ◽  
Aishi Yamamoto ◽  
Masahiro Yoshita ◽  
Yoshiaki Hashimoto ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Particle ◽  
Single Quantum ◽  
Electronic Raman Scattering

Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

1997 ◽  
Vol 468 ◽  
Author(s):  
D. Behr ◽  
R. Niebuhr ◽  
H. Obloh ◽  
J. Wagner ◽  
K. H. Bachem ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Mode ◽  
Phonon Frequency ◽  
Material System ◽  
Single Quantum ◽  
System A ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Excitation Conditions

ABSTRACTWe report on resonant Raman scattering in Al0.15Ga0.85N/GaN single quantum wells (QWs) and AlxGa1-xN/GaN/lnyGa1-yN heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al0.15Ga0.85N barrier of Al0.15Ga0.85N/GaN single quantum wells. For the InxGa1-xN material system a linear frequency shift of the E2- and A1(LO) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79cm-1 per % In content for the A,(LO) phonon frequency. Resonant excitation of AlxGa1-xN/GaN/InyGa1-YN heterostructures enabled us to detect phonon signals from the InxGa1-xN layer in the heterostructure and to determine its In content.

Spin-flip Raman scattering from donor-bound electrons inCd1−xMnxTe/Cd1−yMgyTe single quantum wells

1997 ◽  
Vol 55 (24) ◽  
pp. 16376-16384 ◽  
Author(s):  
R. Meyer ◽  
M. Dahl ◽  
G. Schaack ◽  
A. Waag
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Quantum ◽  
Spin Flip ◽  
Bound Electrons

scholarly journals Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

2004 ◽  
Vol 85 (21) ◽  
pp. 4905-4907 ◽  
Author(s):  
Patrick A. Grandt ◽  
Aureus E. Griffith ◽  
M. O. Manasreh ◽  
D. J. Friedman ◽  
S. Doğan ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Carrier Concentration ◽  
Single Quantum

Electron and holegfactors measured by spin-flip Raman scattering in CdTe/Cd1−xMgxTe single quantum wells

1997 ◽  
Vol 56 (4) ◽  
pp. 2114-2119 ◽  
Author(s):  
A. A. Sirenko ◽  
T. Ruf ◽  
M. Cardona ◽  
D. R. Yakovlev ◽  
W. Ossau ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Quantum ◽  
Spin Flip

Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

2003 ◽  
Vol 0 (7) ◽  
pp. 2662-2665 ◽  
Author(s):  
M. P. Halsall ◽  
B. Sherliker ◽  
P. Harrison ◽  
V. D. Jovanović ◽  
D. Indjin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Intersubband Transitions ◽  
Electronic Raman Scattering

Electronic Raman scattering in double semi-parabolic quantum wells

2013 ◽  
Vol 22 (5) ◽  
pp. 057802 ◽  
Author(s):  
N. Zamani ◽  
A. Keshavarz ◽  
M. J. Karimi
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Electronic Raman Scattering ◽  
Parabolic Quantum Wells
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