Kinetics of Si growth on Ge(100) in Si2H6 gas-source molecular beam epitaxy and low-pressure chemical vapor deposition
Keyword(s):
1998 ◽
Vol 145
(4)
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pp. 1318-1330
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Keyword(s):
Keyword(s):
1998 ◽
Vol 145
(5)
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pp. 1672-1677
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Keyword(s):
Keyword(s):
1993 ◽
Vol 140
(6)
◽
pp. 1717-1722
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Keyword(s):
1990 ◽
Vol 137
(3)
◽
pp. 814-818
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1989 ◽
Vol 47
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pp. 608-609