Sputter growth and chemical analysis by X-ray photoelectron spectroscopy/electron spectroscopy of an InSe thin film

1980 ◽  
Vol 69 (1) ◽  
pp. L5-L8 ◽  
Author(s):  
A.J. McEvoy ◽  
A. Parkes ◽  
K. Solt ◽  
R. Bichsel
1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.


1978 ◽  
Vol 57 (4) ◽  
pp. 551-556 ◽  
Author(s):  
R.L. Bowen

Surface analysis by XPS (X-ray photoelectron spectroscopy), also called ESCA (electron spectroscopy for chemical analysis), indicates that only certain cations are appreciably sorbed by enamel from an acid etching solution containing phosphoric acid and equimolar concentrations of candidate mordant salts.


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