Ion bombardment induced silicide formation during sputter depth profiling of Ta/Si multilayer thin film structure as studied by x-ray photoelectron spectroscopy and auger electron spectroscopy

1991 ◽  
Vol 204 (1) ◽  
pp. 163-174 ◽  
Author(s):  
B.R. Chakraborty ◽  
S. Hofmann
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Film Structure ◽  
Multilayer Thin Film ◽  
Silicide Formation ◽  
X Ray

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

Gold/Niobium Thin Film Metallizations for GaAs Devices and Circuits

2001 ◽  
Vol 695 ◽  
Author(s):  
Robert Esser ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Devices ◽  
Auger Electron Spectroscopy Depth ◽  
Interdiffusion Coefficients

ABSTRACTA refractory metallization of Au/Nb is proposed for use in first level metallization of GaAs devices. The diffusion and reaction kinetics are explored using sheet resistance measurements, along with X-ray diffraction and Auger electron spectroscopy depth profiling. The interdiffusion coefficients are reported. Diodes are fabricated using Nb/Au metallization and characterized

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