Influence of gas composition on the sputtering rate of cathode material in glow-discharge lamps

Vacuum ◽  
1972 ◽  
Vol 22 (3) ◽  
pp. 123
1991 ◽  
Vol 219 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
E. A. Ramsay ◽  
R. S. Crandall ◽  
S. J. Salomon ◽  
...  

ABSTRACTWe have studied methods of improving glow-discharge-deposited a-Si1−x Gex :H alloys deposited using silane and germane gas mixtures. Material processing methods studied include (1) varying the substrate temperature from 170° to 280°C, (2) varying the process gas composition and pressure, (3) dilution of the feed gas by hydrogen, argon, or helium, (4) enhancing etching during deposition by adding small amounts of XeF2 vapor into the process gas, and (5) postdeposition annealing and/or hydrogenation.


1990 ◽  
Vol 67 (7) ◽  
pp. 3264-3268 ◽  
Author(s):  
Yong‐Ho Oh ◽  
Nak‐Heon Choi ◽  
Duk‐In Choi

Author(s):  
E. Barisone ◽  
L. Therese ◽  
Th. Nelis ◽  
A. Zahri ◽  
Ph. Belenguer

Author(s):  
Jochen Busam ◽  
Gagan Paudel ◽  
Marisa Di Sabatino

We demonstrate and compare indium and silicon as secondary cathode material for the analysis of flat, solid alumina and sapphire matrices by direct-current glow discharge mass spectrometry (dc-GDMS). The mask...


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