Spatial distributions of gas composition in rf glow discharge plasmas measured using a quartz sensor

Vacuum ◽  
2009 ◽  
Vol 84 (5) ◽  
pp. 554-558 ◽  
Author(s):  
Atsushi Suzuki ◽  
Hidehiko Nonaka
Keyword(s):  
Glow Discharge ◽  
Spatial Distributions ◽  
Gas Composition ◽  
Discharge Plasmas ◽  
Rf Glow Discharge ◽  
Quartz Sensor

A numerical simulation of rf glow discharge containing an electronegative gas composition

1990 ◽  
Vol 67 (7) ◽  
pp. 3264-3268 ◽  
Author(s):  
Yong‐Ho Oh ◽  
Nak‐Heon Choi ◽  
Duk‐In Choi
Keyword(s):  
Numerical Simulation ◽  
Glow Discharge ◽  
Gas Composition ◽  
Rf Glow Discharge

Self-Adjusting Characterization for Steady-State, Direct Current Cathode-Dominated Glow Discharge Plasmas at High Pressures

2013 ◽  
Vol 30 (8) ◽  
pp. 085201 ◽  
Author(s):  
Fang Ding ◽  
Shi-Jian Zheng ◽  
Bo Ke ◽  
Zhong-Liang Tang ◽  
Yi-Chuan Zhang ◽  
...  
Keyword(s):  
Steady State ◽  
Glow Discharge ◽  
Direct Current ◽  
High Pressures ◽  
Discharge Plasmas

Current-voltage characteristics of aluminium nitride films formed by RF glow discharge

1980 ◽  
Vol 13 (6) ◽  
pp. L101-L105 ◽  
Author(s):  
D Mangalaraj ◽  
M Radhakrishnan ◽  
C Balasubramanian ◽  
A R Kasilingam
Keyword(s):  
Glow Discharge ◽  
Aluminium Nitride ◽  
Current Voltage ◽  
Rf Glow Discharge ◽  
Current Voltage Characteristics

Microcrystalline Silicon Films Deposited by Cathode‐Type RF Glow Discharge Technique

1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka
Keyword(s):  
Glow Discharge ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Rf Glow Discharge

Prospective Applications of Low Frequency Glow Discharge Plasmas on Enhanced Germination, Growth and Yield of Wheat

2017 ◽  
Vol 38 (1) ◽  
pp. 13-28 ◽  
Author(s):  
N. C. Roy ◽  
M. M. Hasan ◽  
M. R. Talukder ◽  
M. D. Hossain ◽  
A. N. Chowdhury
Keyword(s):  
Glow Discharge ◽  
Low Frequency ◽  
Growth And Yield ◽  
Discharge Plasmas

Methods of Improving Glow-Discharge-Deposited a-Si1−xGex:H

1991 ◽  
Vol 219 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
E. A. Ramsay ◽  
R. S. Crandall ◽  
S. J. Salomon ◽  
...  
Keyword(s):  
Material Processing ◽  
Glow Discharge ◽  
Substrate Temperature ◽  
Gas Mixtures ◽  
Gas Composition ◽  
Processing Methods ◽  
Helium 4 ◽  
Process Gas

ABSTRACTWe have studied methods of improving glow-discharge-deposited a-Si1−x Gex :H alloys deposited using silane and germane gas mixtures. Material processing methods studied include (1) varying the substrate temperature from 170° to 280°C, (2) varying the process gas composition and pressure, (3) dilution of the feed gas by hydrogen, argon, or helium, (4) enhancing etching during deposition by adding small amounts of XeF2 vapor into the process gas, and (5) postdeposition annealing and/or hydrogenation.

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