913. Investigation of surface layer of silicon after etching in high-frequency gas-discharge plasma

Vacuum ◽  
1974 ◽  
Vol 24 (7) ◽  
pp. 318
Author(s):  
Юрий Федорович Иванов ◽  
Елизавета Алексеевна Петрикова ◽  
Сергей Витальевич Лыков ◽  
Юлия Александровна Денисова ◽  
Олег Сергеевич Толкачев

Ионное азотирование является одним из наиболее распространенных способов поверхностного упрочнения деталей и инструмента. Цель настоящей работы - выявление и анализ закономерностей преобразования структуры и свойств поверхностного слоя высокохромистой нержавеющей стали, подвергнутой низкотемпературному азотированию в плазме газового разряда низкого давления. Установлено, что насыщение азотом (793 К, 3 час.) аустенитной высокохромистой стали 202318 в плазме газового разряда низкого давления сопровождается формированием в слое толщиной (55 - 60) мкм структуры пластинчатого типа с чередующимися пластинами аустенита и нитрида железа (поперечные размеры пластин не превышают 10 нм), микротвердость и износостойкость которой превышают в 6,5 раз и более чем в 400 раз соответствующие характеристики исходного состояния. Ion nitriding is one of the most common methods of surface hardening of parts and tools. The purpose of this work is to identify and analyze the laws governing the transformation of the structure and properties of the surface layer of high-chromium stainless steel subjected to low-temperature nitriding in a low-pressure gas discharge plasma. It was found that the saturation with nitrogen (793 K, 3 hours) of austenitic high-chromium steel 20X23H18 in a low-pressure gas discharge plasma is accompanied by the formation of a plate type structure with alternating plates of austenite and iron nitride in a layer (55 - 60) µm thick (transverse plate sizes do not exceed 10 nm), the microhardness and wear resistance of which exceed the microhardness of the initial state by 6,5 times, wear resistance - more than 400 times.


1989 ◽  
Vol 03 (06) ◽  
pp. 485-488
Author(s):  
O.E. KUSMARTSEVA ◽  
F.D. SENCHUKOV

An inversion of the conduction type of the p-silicon surface layer by gas discharge plasma treatment was observed. It was found that this conduction inversion was conditioned by donor center formation. Donor behavior are discussed. Some plasma treatment regimes to induce the donor centers in silicon are reported.


1977 ◽  
Vol 12 (4) ◽  
pp. 431-434
Author(s):  
V. A. Vonsyatskii ◽  
E. A. Roter ◽  
V. A. Teterskii ◽  
A. N. Tynnyi

2020 ◽  
Vol 1 (1) ◽  
pp. 45-53
Author(s):  
Antonina Malinina

Diagnostics of the emission spectra of a gas-discharge plasma of a barrier discharge of atmospheric pressure in mixtures of cadmium diiodide vapor with neon and small additions of xenon is carried out. A gas-discharge plasma was created and the components of the working mixture were excited by a high-frequency barrier discharge at a sinusoidal voltage pulse repetition rate of up to 140 kHz. Emission of exciplex molecules of cadmium monoiodide with a maximum emission at a wavelength of λ = 655 nm and xenon iodide with a maximum of radiation at wavelengths λ = 253 and λ = 320 nm, excimer molecules of iodine, lines of atoms of cadmium, iodine, neon and xenon was revealed. It was found that at temperatures of the mixtures under study above 150 0C, the predominance of radiation from exciplex molecules of cadmium monoiodide is observed. The reason for the increased brightness of the emission of exciplex molecules of cadmium monoiodide in mixtures of cadmium diiodide vapor with neon and xenon additive is established. The regularities in the spectral characteristics of radiation in the mixtures under study are discussed. A high-frequency barrier discharge of atmospheric pressure in mixtures of cadmium diiodide vapor with neon and xenon is of interest for creating a multi-wavelength excilamp in the UV and visible spectral ranges


1955 ◽  
Vol 98 (2) ◽  
pp. 310-316 ◽  
Author(s):  
David J. Rose ◽  
Sanborn C. Brown

1997 ◽  
Vol 7 (5) ◽  
pp. 1039-1044
Author(s):  
N. N. Lebedeva ◽  
V. I. Orbukh ◽  
B. G. Salamov ◽  
M. Özer ◽  
K. Çolakoǧlu ◽  
...  

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-873-C7-874
Author(s):  
Yu. I. Filenko ◽  
B. M. Stepanov ◽  
L. S. Ushakov

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