Recent progress in ion beam lithography

1989 ◽  
Vol 9 (1-4) ◽  
pp. 269-276 ◽  
Author(s):  
W.L. Brown
Keyword(s):  
Recent Progress ◽  
Ion Beam ◽  
Ion Beam Lithography

Recent Progress in Nano-electronic Devices Based on EBL and IBL

2020 ◽  
Vol 16 (2) ◽  
pp. 157-169
Author(s):  
Yusheng Pan ◽  
Ke Xu
Keyword(s):  
Electron Beam ◽  
Electronic Properties ◽  
Electron Beam Lithography ◽  
Recent Progress ◽  
Ion Beam ◽  
Electronic Devices ◽  
Ion Beam Lithography ◽  
Similarities And Differences

Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising nanofabrication techniques for building nano-electronic devices due to their outstanding physical and electronic properties. In this review, an overview of EBL and IBL and a comparison of nanoelectronics fabricated based on four types of materials, namely graphene, ZnO, TiO2 and Ge, are presented. In each type of material, numerous practical examples are also provided in the illustration. Later, the strengths and weaknesses of EBL and IBL are presented in details. Finally, the similarities and differences between the two techniques are discussed and concluded.

scholarly journals Ion-beam lithography by use of highly charged Ar-ion beam

2006 ◽  
Vol 77 (3) ◽  
pp. 03C111 ◽  
Author(s):  
Sadao Momota ◽  
Shingo Iwamitsu ◽  
Shougo Goto ◽  
Yoichi Nojiri ◽  
Jun Taniguchi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Lithography

Large-Scale Focused Helium Ion Beam Lithography

2021 ◽  
Vol 31 (5) ◽  
pp. 1-4
Author(s):  
Jay C. LeFebvre ◽  
Shane A. Cybart
Keyword(s):  
Large Scale ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Helium Ion

Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

2012 ◽  
Vol 272 ◽  
pp. 149-152 ◽  
Author(s):  
Nitipon Puttaraksa ◽  
Somrit Unai ◽  
Michael W. Rhodes ◽  
Kanda Singkarat ◽  
Harry J. Whitlow ◽  
...  
Keyword(s):  
Soft Lithography ◽  
Ion Beam ◽  
Master Mold ◽  
Ion Beam Lithography

Maskless ion beam lithography system

1999 ◽  
Vol 46 (1-4) ◽  
pp. 469-472 ◽  
Author(s):  
Y. Lee ◽  
R.A. Gough ◽  
T.J. King ◽  
Q. Ji ◽  
K.N. Leung ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Lithography ◽  
Lithography System

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Film Growth ◽  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Early Stages ◽  
Semiconductor Thin Films ◽  
Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

Microstructures of GaAs fabricated by finely focused ion beam lithography

1989 ◽  
Vol 9 (1-4) ◽  
pp. 277-279 ◽  
Author(s):  
Takao Shiokawa ◽  
Pil Hyon Kim ◽  
Manabu Hamagaki ◽  
Tamio Hara ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography
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