Microstructures of GaAs fabricated by finely focused ion beam lithography

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

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Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽

10.3390/nano10030508 ◽

2020 ◽

Vol 10 (3) ◽

pp. 508 ◽

Cited By ~ 1

Author(s):

Stanislav Tiagulskyi ◽

Roman Yatskiv ◽

Hana Faitová ◽

Šárka Kučerová ◽

David Roesel ◽

...

Keyword(s):

Electrical Properties ◽

Leakage Current ◽

Focused Ion Beam ◽

Ion Beam ◽

Zno Nanorods ◽

Carrier Injection ◽

Ion Beam Lithography ◽

Current Voltage ◽

P Type ◽

Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

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Fabrication of Nano- and Micro-Scale UV Imprint Stamp Using Diamond-Like Carbon Coating Technology

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2006.17994 ◽

2006 ◽

Vol 6 (11) ◽

pp. 3619-3623

Author(s):

Eung-Sug Lee ◽

Jun-Ho Jeong ◽

Ki-Don Kim ◽

Young-Suk Sim ◽

Dae-Geun Choi ◽

...

Keyword(s):

Nanoimprint Lithography ◽

Focused Ion Beam ◽

Ion Beam ◽

Adhesive Layer ◽

Diamond Like Carbon ◽

Coating Process ◽

Ion Beam Lithography ◽

Two Photon ◽

Dlc Coating ◽

Two Photon Polymerization

Two-dimensional (2-D) and three-dimensional (3-D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography were fabricated with two methods: namely, a DLC coating process, followed by focused ion beam lithography; and two-photon polymerization patterning, followed by nanoscale-thick DLC coating. We used focused ion beam lithography to fabricate 70 nm deep lines with a width of 100 nm, as well as 70 nm deep lines with a width of 150 nm, on 100 nm thick DLC layers coated on quartz substrates. We also used two-photon polymerization patterning and a DLC coating process to successfully fabricate 200 nm wide lines, as well as 3-D rings with a diameter of 1.35 μm and a height of 1.97 μm, and a 3-D cone with a bottom diameter of 2.88 μm and a height of 1.97 μm. The wafers were successfully printed on an UV-NIL using the DLC stamps without an anti-adhesive layer. The correlation between the dimensions of the stamp's features and the corresponding imprinted features was excellent.

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