Etching and annealing kinetics of heavy ion tracks in quartz crystal

Author(s):  
Lakhwant Singh ◽  
A.S. Sandhu ◽  
Surinder Singh ◽  
H.S. Virk
Author(s):  
Eric O'Quinn ◽  
Cameron Tracy ◽  
William F. Cureton ◽  
Ritesh Sachan ◽  
Joerg C. Neuefeind ◽  
...  

Er2Sn2O7 pyrochlore was irradiated with swift heavy Au ions (2.2 GeV), and the induced structural modifications were systematically examined using complementary characterization techniques including transmission electron microscopy (TEM), X-ray diffraction...


1992 ◽  
Vol 12 (2-3) ◽  
pp. 23-32 ◽  
Author(s):  
L.A. Braby ◽  
N.F. Metting ◽  
W.E. Wilson ◽  
L.H. Toburen
Keyword(s):  

1987 ◽  
Vol 93 ◽  
Author(s):  
Witold P. Maszara

ABSTRACTSilicon wafers with and without protective1Ahermil oxide were implanted with oxygen at 150keV with doses 1.6 – 2.0×1018 cm−2. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) were used to study the top silicon layer remaining above the implanted buried oxide. regular array of spheroidal voids filled with oxygen gas was observed only in the samples that were not protected by the oxide. The voids were aligned into individual columns whose crystallographic orientation with respect to the host silicon lattice matched the direction of the implantation. The origin and the kinetics of their formation are discussed.


2001 ◽  
Vol 105 (33) ◽  
pp. 7979-7983 ◽  
Author(s):  
Petr Krtil ◽  
Antonín Trojánek ◽  
Zdeněk Samec

2012 ◽  
Vol 5 (8) ◽  
pp. 086401 ◽  
Author(s):  
Yutaka Mori ◽  
Tomoya Yamauchi ◽  
Masato Kanasaki ◽  
Atsuto Hattori ◽  
Yuri Matai ◽  
...  

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