Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
Witold P. Maszara
Keyword(s):  
Silicon Layer ◽  
High Dose ◽  
Regular Array ◽  
Ion Tracks ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Oxygen Gas ◽  
Kinetics Of ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTSilicon wafers with and without protective1Ahermil oxide were implanted with oxygen at 150keV with doses 1.6 – 2.0×1018 cm−2. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) were used to study the top silicon layer remaining above the implanted buried oxide. regular array of spheroidal voids filled with oxygen gas was observed only in the samples that were not protected by the oxide. The voids were aligned into individual columns whose crystallographic orientation with respect to the host silicon lattice matched the direction of the implantation. The origin and the kinetics of their formation are discussed.

Formation of Excess Donors During High-Dose 74Ge+ Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Z. Xia ◽  
E. Ristolainen ◽  
R. Elliman ◽  
H. Ronkainen ◽  
S. Eränen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Defects ◽  
High Dose ◽  
Donor Concentration ◽  
Materials Analysis ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Annealing ◽  
Secondary Ion

AbstractRecently observations that high-dose Ge implantations into Si substrates caused the n-type carrier concentration to increase were attributed to residual structural defects after activation annealing [7,12]. However, co-implantation of an n-type impurity is another possibility. The origin of this excess donor concentration has been studied in this work. The possibilities of residual defects versus implantation of impurities have been investigated using two different implanters and materials analysis. Comparison of data from different implanters showed that the concentration of excess donors was sensitive to the implanter configuration. Furthermore, transmission electron microscopy (TEM), Rutherford backscattering channeling (RBS-C), and spreading resistance profiling (SRP) data showed that the excess donor effect was related to impurities rather than residual defects. Secondary-ion mass spectroscopy (SIMS) and SRP measurements confirmed that impurities such as 75As ions were present after implants. This impurity easily explains the excess donor concentration when 75Ge implants are performed into silicon wafers doped with phosphorous.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD

1994 ◽  
Vol 358 ◽  
Author(s):  
H. Paul Maruska ◽  
R. Sudharsanan ◽  
Eric Bretschneider ◽  
Albert Davydov ◽  
J.E. Yu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Secondary Ion Mass Spectrometry ◽  
Silicon Nanostructures ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Edge Emission ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched ◽  
Zns Films

ABSTRACTSilicon multiquantum wells ranging in width from 3 to 15 nm were deposited on closely lattice-matched ZnS barriers. MOCVD was used to deposit the ZnS films using diethyl zinc and hydrogen sulfide as the precursors; disilane was used to deposit silicon layers at low temperatures. Single and multiple silicon nano-layers were observed by transmission electron microscopy and secondary ion mass spectrometry. Photoluminesence studies revealed emissions peaks which were blue-shifted with respect to the edge emission from bulk silicon substrates. The observation of emission from silicon nanostructures shifted to wavelengths as short as the 800-850 nm range is consistent with the effects of quantum confinement in silicon nanostructures.

Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
D. C. Jacobson ◽  
S. J. Pearton ◽  
R. Hull ◽  
J. M. Poate ◽  
J. S. Williams
Keyword(s):  
Carrier Mobility ◽  
Secondary Ion Mass Spectrometry ◽  
High Dose ◽  
Electrical Characteristics ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Capacitance Voltage ◽  
Lattice Damage ◽  
Removal Processes ◽  
Secondary Ion

ABSTRACTThe removal of lattice damage and consequent activation by rapid thermal annealing of implanted Si, Se, Zn and Be in GaAs was investigated by capacitance-voltage profiling, Hall measurements, transmission electron microscopy (TEM), secondary ion mass spectrometry and Rutherford backscattering. The lighter species show optimum electrical characteristics at lower annealing temperatures (˜850°C for Be, ˜950°C for Si) than the heavier species (˜900°C for Zn, ˜1000°C for Se), consistent with the amount of lattice damage remaining after annealing. TEM reveals the formation of high densities (107 cm−2) of dislocation loops after 800°C, 3s anneals of high dose (1×1015 cm−2) implanted GaAs, which are gradually reduced in density after higher temperatures anneals (˜1000°C). The remaining loops do not appear to effect the electrical activation or carrier mobility in the implanted layer, the latter being comparable to bulk values.

Formation of Silicon on Insulator Structures By Implanted Nitrogen

1985 ◽  
Vol 53 ◽  
Author(s):  
L. Nesbit ◽  
S. Stiffler ◽  
G. Slusser ◽  
H. Vinton
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mass Spectroscopy ◽  
Silicon Wafers ◽  
Silicon On Insulator ◽  
High Dose ◽  
Secondary Ion Mass Spectroscopy ◽  
Transmission Electron ◽  
Final Microstructure ◽  
Secondary Ion

ABSTRACTThe formation of a silicon-on-insulator (SOI) structure by implanting a high dose of N+ ions to form a buried Si3N4 layer is studied by transmission electron microscopy (TEM) and by secondary ion mass spectroscopy (SIMS). The SOI structure is formed by implanting silicon wafers with 7.5x1017 N+ ions/cm2 at 160 keV and at wafer temperatures of 400, 500, or 600°C. The implanted wafers are subsequently annealed at 1200°C for times ranging from 10 minutes to 2 hours. The microstructures and nitrogen distributions of the asimplanted and post-annealed wafers are examined in order to elucidate the development of the final microstructure.

Oxygen bubble formation and evolution during oxygen implantation and annealing of silicon-on-insulator material

1991 ◽  
Vol 49 ◽  
pp. 864-865
Author(s):  
S J. Krause ◽  
J.D. Lee ◽  
B.L. Chen ◽  
S. Seraphin ◽  
B. Cordts ◽  
...  
Keyword(s):  
Structural Changes ◽  
Bubble Formation ◽  
Silicon Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation ◽  
Transmission Electron ◽  
Formation And Evolution ◽  
Radiation Hard

Silicon-on-insulator (SOI) material fabricated by high dose oxygen implantation (SIMOX) is a material increasingly used for higher speed and radiation hard circuits. During implantation a variety of structural changes occur, including the formation of defects, bubbles, precipitates, and the buried oxide layer. The topic of bubble formation and evolution has received only limited study. Sjoreen et al. first reported the presence of spherical, randomly distributed precipitates near the top surface of the silicon layer. El-Ghor et al. further examined these precipitates and proposed that they were cavities filled with oxygen. Maszara confirmed the presence of spheroids filled with oxygen in the silicon top surface region in the 1mA cm-2 as-implanted samples. In this work, transmission electron microscopy (TEM) techniques were used to investigate the effect of implantation conditions on the bubble formation and the effect of subsequent annealing conditions on the evolution of bubbles.

Microstructure and Electrical Properties of Zinc Films on InP

1995 ◽  
Vol 403 ◽  
Author(s):  
E. Kamiinska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
S. Kasjaniuk ◽  
E. Mizera ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Secondary Ion Mass Spectrometry ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched ◽  
Inp Surface

AbstractThe interactions between thin films of Zn and (100)InP were analysed with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition, and to form an ohmic contact when deposited on n-type InP. Under heat treatment Zn protrudes into InP, and beneath Zn/InP interface a tetragonal Zn3P2 phase lattice matched to InP grows.

Ftir Spectroscopy and Spectroscopic Ellipsometry Study of Nanocrystalline Layers Formed by High-Dose Hydrogen and Deuterium Implantation of Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
L.N. Safronov ◽  
E.V. Spesivtsev ◽  
V.P. Popov ◽  
I.V. Antonova ◽  
A.K. Gutakovskii ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
High Dose ◽  
Ir Absorption ◽  
Hydrogen Atoms ◽  
High Hydrogen ◽  
Transmission Electron

ABSTRACTStructural study of a-Si layers formed by high fluence hydrogen or deuterium implantation (up to 5×1017 cm−2) using high current beams with means of current up 40 mA/cm2 was carried out in the present work. The Si:H(D) silicon films were characterized using FTIR spectroscopy, spectroscopic ellipsometry, transmission electron microscopy and secondary ion mass spectrometry. Hydrogen solubility in crystalline silicon is low but ion implantation allows one to introduce hydrogen atoms in the concentration of 1022cm−3 or even more in thin silicon layer. High defect concentration in combination with high hydrogen activity causes the formation of mixed amorphous and crystalline phases with structure similar to silicon produced PECVD or laser ablation. The transformation of optical properties of this film during annealing in temperature range of 200-1050°C was investigated. The changes in optical characteristics and number of Si-H or Si-D bonds in the spectra of IR absorption is correlated with increase in crystalline volume of silicon with a temperature.

Mn Implantation for New Applications of 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 221-224 ◽  
Author(s):  
Margareta K. Linnarsson ◽  
Jennifer Wong-Leung ◽  
Anders Hallén ◽  
S.I. Khartsev ◽  
A.M. Grishin
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Near Infrared ◽  
Secondary Ion Mass Spectrometry ◽  
Stacking Faults ◽  
Structural Disorder ◽  
High Dose ◽  
Transmission Electron ◽  
New Applications ◽  
Secondary Ion

Structural disorder and lattice recovery of high dose, manganese implanted, semi-insulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in the [11 3] compared to the [0001] channel direction. Stacking faults, voids and 3C inclusions are observed in the implanted region. A Mn containing phase has most likely formed.

Fabrication and Evaluation of Ternary Co-Fe-Si Structures Produced by Ion Beam Synthesis

1992 ◽  
Vol 279 ◽  
Author(s):  
Tim D. Hunt ◽  
Brian J. Sealy ◽  
Jochen Hanebeck ◽  
Karen J. Reeson ◽  
Kevin P. Homewood ◽  
...  
Keyword(s):  
Single Phase ◽  
Low Dose ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Single Species ◽  
High Dose ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Secondary Ion

ABSTRACTDual implantation of cobalt and iron into silicon (100) wafers and subsequent annealing has been used to form layers containing mixtures of CoSi2 and FeSi2. The structure and properties of the layers were followed by Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), Transmission Electron Diffraction (TED), Rutherford Backscattering Spectroscopy (RBS), and photoluminescence (PL). When a high dose of both species was implanted, segregation of the cobalt and iron occurred which for 1000°C anneals, resulted in an epitaxial layer of αFeSi2 upon a CoSi2 layer. The epitaxial quality of both of these layers was superior to those previously fabricated by single species implants. For a low dose cobalt implant followed by a high dose iron implant, a single phase solid solution was formed and segregation did not occur. Photoluminescence at 1.54 urn was observed from this layer, but with a much lower intensity and a broader line width than that from a pure βFeSi2 layer.

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