Electric field strength in a silicon surface barrier detector with the presence of a dielectric plasma column

1994 ◽  
Vol 353 (1-3) ◽  
pp. 93-96 ◽  
Author(s):  
Ikuo Kanno
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Plasma Column ◽  
Silicon Surface ◽  
Surface Barrier ◽  
Surface Barrier Detector ◽  
Barrier Detector ◽  
Silicon Surface Barrier Detector

Driftgeschwindigkeit und Beweglichkeit von Elektronen in Silicium bei 4,2 °K in Abhängigkeit vom elektrischen Feld / Driftvelocity and Mobility of Electrons in Silicon at 4.2 °K in Dependence of Electric Field

1972 ◽  
Vol 27 (1) ◽  
pp. 26-30
Author(s):  
P. Deimel
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Silicon Surface ◽  
Surface Barrier ◽  
Surface Barrier Detector ◽  
Direct Information ◽  
Fully Depleted ◽  
Barrier Detector ◽  
High Electric Fields ◽  
Silicon Surface Barrier Detector

Abstract The pulse rise times of an n-type silicon surface barrier detector were measured at 4.2 °K. At this temperature the detector was fully depleted even at very low bias and the measured pulse rise times gave direct information about the driftvelocity and the mobility. Instead of E-0.5, an E-0.8 dependence of the mobility at moderate electric fields was found. At high electric fields agreement exists with theory.

Improved model of plasma column erosion in a silicon surface barrier detector

1994 ◽  
Vol 65 (9) ◽  
pp. 3040-3041 ◽  
Author(s):  
Ikuo Kanno ◽  
Takashi Inbe ◽  
Satoshi Kanazawa ◽  
Itsuro Kimura
Keyword(s):  
Plasma Column ◽  
Silicon Surface ◽  
Surface Barrier ◽  
Surface Barrier Detector ◽  
Barrier Detector ◽  
Improved Model ◽  
Silicon Surface Barrier Detector

Si-Oberflächensperrschichtzähler in hohen Magnetfeldern bei 4,2 °K

1969 ◽  
Vol 24 (1) ◽  
pp. 154-161 ◽  
Author(s):  
P. Deimel ◽  
H. Rauch
Keyword(s):  
Magnetic Fields ◽  
Silicon Surface ◽  
Surface Barrier ◽  
Surface Barrier Detector ◽  
Recombination Probability ◽  
Barrier Detector ◽  
Severe Deterioration ◽  
Considerable Loss ◽  
Transversal Magnetic ◽  
Silicon Surface Barrier Detector

AbstractA n-type silicon surface barrier detector was examined at 4,2 °K in longitudinal and transversal magnetic fields up to 60 kOe. Particularly in transversal magnetic fields and at low reverse bias a severe deterioration of resolution and an increase of pulse rise times is effected by the altered charge collection. The increased recombination probability results in a considerable loss of charge.

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