A multi-channel temperature controller for diffusion furnace

1980 ◽  
Vol 6 (5) ◽  
pp. 325-329
Author(s):  
W. Lobodzinski ◽  
M. Orzylowski ◽  
Z. Rudolf
Author(s):  
Brooks B. Lowrey ◽  
Christopher R. Brown ◽  
Daniel S. Park ◽  
Michael C. Murphy

A commercially manufactured thermostat (Model C Thermostat, Portage Electronic Products Inc., North Canton, OH) was employed as a precision MEMS temperature controller for a simulated continuous flow thermal reactor, with three temperature zones to mimic a polymerase chain reaction (CFPCR) device but different temperature set points to allow use of off-the-shelf controllers and thermally-responsive fluids. The ability of the commercial thermostats to maintain the temperatures within given tolerance bands in the thermal reactor was investigated. The factory supplied and calibrated thermostats were actuated by trimetallic strips, and supplied in a normally-closed configuration. Each thermostat was arranged in series with a 28 VDC power supply, a Kapton heater, and an aluminum thermal block to establish a constant temperature boundary condition for each temperature zone. Calibration temperatures for each thermostat reflected the three temperature set points of the simulated PCR device in the testing apparatus. Temperatures were collected by fixing Type K thermocouples in the fluidic channels of the simulated PCR device, and recording the temperature over time. The commercial, off-the-shelf, open-loop controllers successfully maintained ±1°C tolerance bands within each thermal zone. The ±1°C variation in the channel temperature was caused by the chatter due to the switching of the thermostat.


1989 ◽  
Vol 6 (3) ◽  
pp. 190-195
Author(s):  
V Nattarasu ◽  
R D Sudhaker Samuel ◽  
A Prakashan

Author(s):  
Q. Kim ◽  
S. Kayali

Abstract In this paper, we report on a non-destructive technique, based on IR emission spectroscopy, for measuring the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). A submicron-size He-Ne laser provides the local excitation of the gate channel and the emitted photons are collected by a spectrophotometer. Given the state of our experimental test system, we estimate a spectral resolution of approximately 0.1 Angstroms and a spatial resolution of approximately 0.9 μm, which is up to 100 times finer spatial resolution than can be obtained using the best available passive IR systems. The temperature resolution (<0.02 K/μm in our case) is dependent upon the spectrometer used and can be further improved. This novel technique can be used to estimate device lifetimes for critical applications and measure the channel temperature of devices under actual operating conditions. Another potential use is cost-effective prescreening for determining the 'hot spot' channel temperature of devices under normal operating conditions, which can further improve device design, yield enhancement, and reliable operation. Results are shown for both a powered and unpowered MESFET, demonstrating the strength of our infrared emission spectroscopy technique as a reliability tool.


2021 ◽  
pp. 111595
Author(s):  
Abu Zahed Chowdhury ◽  
Mohammad Abdul Alim ◽  
Shariful Islam ◽  
Christophe Gaquiere

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