A DLTS technique for surface state capture cross-section measurement of MOS diodes

1985 ◽  
Vol 22-23 ◽  
pp. 1004-1010 ◽  
Author(s):  
Dipankar Sengupta ◽  
M.Mohan Chandra ◽  
Vikram Kumar
2008 ◽  
Vol 66 (9) ◽  
pp. 1235-1239 ◽  
Author(s):  
M.S. Uddin ◽  
M.H. Chowdhury ◽  
S.M. Hossain ◽  
Sk.A. Latif ◽  
M.A. Hafiz ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Fu-Chien Chiu

The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.


2019 ◽  
Vol 57 (1) ◽  
pp. 24-39 ◽  
Author(s):  
Gerard Rovira ◽  
Tatsuya Katabuchi ◽  
Kenichi Tosaka ◽  
Shota Matsuura ◽  
Kazushi Terada ◽  
...  

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