Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide
2013 ◽
Vol 2013
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pp. 1-5
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Keyword(s):
The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.
1985 ◽
Vol 22-23
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pp. 1004-1010
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Keyword(s):
1977 ◽
Vol 24
(9)
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pp. 1206-1207
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2021 ◽
Vol 21
(3)
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pp. 1904-1908
1980 ◽
Vol 27
(2)
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pp. 461-466
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Keyword(s):
1998 ◽
Vol 145
(2)
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pp. 683-689
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