The phonon spectrum of a normal-state tunnel junction

1996 ◽  
Vol 219-220 ◽  
pp. 766-769 ◽  
Author(s):  
U. Wenschuh ◽  
W. Dietsche
1994 ◽  
Vol 50 (12) ◽  
pp. 8352-8357 ◽  
Author(s):  
J. Cooper ◽  
S. Roshko ◽  
W. Dietsche ◽  
Y. Kershaw ◽  
U. Wenschuh
Keyword(s):  

2000 ◽  
Vol 77 (12) ◽  
pp. 1870 ◽  
Author(s):  
B. J. Jönsson-Åkerman ◽  
R. Escudero ◽  
C. Leighton ◽  
S. Kim ◽  
Ivan K. Schuller ◽  
...  

Author(s):  
Т.М. Ким ◽  
С.В. Шитов

The device operates at temperatures <300 mK and comprises a hafnium microbridge and a superconducting aluminum tunnel junction both integrated into a common coplanar waveguide. The microbridge is a thermodynamic source and operates as an optical blackbody at frequencies 600–700 GHz. The coplanar terminal is the blackbody output in the 1–2 GHz frequency range. The microbridge temperature can be set in the range of 0.4–9 K and calibrated using the shot noise of the tunnel junction. Activation and temperature modulation of each of the sources can be performed independently using a direct current which transit them from the superconducting to the normal state with characteristic times <0.1 ms and heating power <1 μW.


2000 ◽  
Vol 14 (25n27) ◽  
pp. 3038-3043 ◽  
Author(s):  
G. P. PEPE ◽  
L. PARLATO ◽  
G. AMMENDOLA ◽  
E. ESPOSITO ◽  
G. GRIECO ◽  
...  

Interest in superconducting transistors is due to some potential benefits of these devices, such as the possibility to have large current gain and bandwidth at low temperatures. In this work we present experimental results concerning with a new superconducting 3-terminal device showing true transistor-like properties at T=4.2K. It is a stacked double tunnel junction structure where the intermediate film is a bilayer of superconducting Nb with an Al quasiparticle trap which can be either in the superconducting or in the normal metal state. Current amplification factors of up to 2.0 are observed at a temperature of 4.2 K when the Al is superconducting. When the Al is in the normal state, large current gains of more than 50 are observed. The operation is highly directional, i.e. practically no effect is observed when the roles of the injector and detector junctions are reversed. The results are explained according to the recently proposed QUAsiparticle TRApping TRANnsistor model.


1978 ◽  
Vol 39 (C6) ◽  
pp. C6-1234-C6-1235 ◽  
Author(s):  
T. Claeson ◽  
S. Rudner ◽  
S. Wahlsten

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-1232-C6-1233 ◽  
Author(s):  
N. F. Pedersen ◽  
J. Mygind ◽  
O. H. Soerensen ◽  
B. Dueholm

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-1037-C6-1038
Author(s):  
V.M. Pan ◽  
B.G. Nikitin ◽  
A.M. Korostil ◽  
V.V. Nemoshkalenko ◽  
V.P. Dovgopol ◽  
...  

1999 ◽  
Vol 23 (1_2) ◽  
pp. 49-51 ◽  
Author(s):  
H. Kikuchi ◽  
K. Kobayashi ◽  
M. Sato

2016 ◽  
Vol 8 (1) ◽  
pp. 01010-1-01010-5 ◽  
Author(s):  
A. I. Kashuba ◽  
◽  
S. V. Apunevych ◽  

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