APPROXIMATE CRITERIA OF THE QUALITY OF TRANSIENT RESPONSE IN LINEAR SYSTEMS FROM THE ROOTS OF THE CHARACTERISTIC EQUATION

1961 ◽  
pp. 314-361
Author(s):  
E.P. POPOV
Keyword(s):  
Linear Systems ◽  
Transient Response ◽  
Characteristic Equation

A scheme for expressing instrumental responses parametrically

1977 ◽  
Vol 67 (3) ◽  
pp. 957-969 ◽  
Author(s):  
Peter C. Luh
Keyword(s):  
Transfer Function ◽  
Linear Systems ◽  
Hilbert Transform ◽  
Transfer Functions ◽  
Poor Quality ◽  
Phase Response ◽  
Seismic Instrument ◽  
Amplitude Response ◽  
Response Range

abstract This study shows that, provided a seismic instrument as a whole behaves linearly over its response range, and provided its phase response is known accurately, the instrumental responses can be parametrically expressed in terms of transfer functions of linear systems. The scheme is based on the observation that knowing accurately the detailed overall amplitude and phase responses of a linear instrument is tantamount to knowing all the pertinent constants for the construction of its overall transfer function. Because of generally poor quality of empirical phase calibrations, empirical phases are substituted by minimum phases, calculated via a Hilbert transform of amplitude response. Application of the scheme to actual SRO (LP) and USGS (SP) instruments resulted in sufficiently close agreements between parametric and actual responses to warrant the utility of the scheme.

Band-Edge Photoresponse Characteristics of Diamond Msm's

1993 ◽  
Vol 302 ◽  
Author(s):  
Mike Marchywka ◽  
Steven C. Binari ◽  
Deborah A. Koolbeck ◽  
Daniel Moses
Keyword(s):  
Steady State ◽  
Transient Response ◽  
Dark Current ◽  
Vacuum Ultraviolet ◽  
Light Signal ◽  
Band Edge ◽  
Metal Semiconductor Metal ◽  
Response Versus ◽  
Substrate Properties

ABSTRACTBand-edge photoresponse measurements on simple diamond metal-semiconductor-metal (MSM) devices can give information about the quality of the diamond material and its utility as a detector. We have fabricated several such devices on a variety of substrates and measured their response between 700 and 120nm with special emphasis around the band edge near 220nm. Steady state and transient response have been measured as a function of bias conditions. Transient response in this case refers to initial overshoot, undershoot, and increased dark current in response to a chopped vacuum ultraviolet (VUV) light signal for times on the order of seconds. We compare steady state quantum efficiency results to a simple model, discuss the characteristics of response versus applied voltage, and examine relationships between response and substrate properties.

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