Vacuum Ultraviolet
Recently Published Documents


TOTAL DOCUMENTS

4723
(FIVE YEARS 532)

H-INDEX

100
(FIVE YEARS 20)

Author(s):  
Satoshi Inoue ◽  
Yoshiaki HATTORI ◽  
Masatoshi KITAMURA

Abstract A trimethylsilyl-monolayer modified by vacuum ultraviolet (VUV) light has been investigated for use in solution-processed organic thin-film transistors (OTFTs). The VUV irradiation changed a hydrophobic trimethylsilyl-monolayer formed from hexamethyldisilazane vapor into a hydrophilic surface suitable for solution processing. The treated surface was examined via water contact angle measurement and X-ray photoelectron spectroscopy. An appropriate irradiation of VUV light enabled the formation of a dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) film on a modified monolayer by spin-coating. Consequently, the C8-BTBT-based OTFT with a monolayer modified for an optimal VUV irradiation time exhibited a field-effect mobility up to 4.76 cm2 V−1 s−1. The partial monolayer modification with VUV can be adapted to a variety of solution-processes and organic semiconductors for prospective printed electronics.


2022 ◽  
Vol 12 (2) ◽  
pp. 644
Author(s):  
Andrei Vasile Nastuta ◽  
Torsten Gerling

Application desired functionality as well as operation expenses of cold atmospheric pressure plasma (CAP) devices scale with properties like gas selection. The present contribution provides a comparative investigation for a CAP system operated in argon or helium at different operation voltages and distance to the surface. Comparison of power dissipation, electrical field strength and optical emission spectroscopy from vacuum ultraviolet over visible up to near infrared ((V)UV-VIS-NIR) spectral range is carried out. This study is extended to safety relevant investigation of patient leakage current, induced surface temperature and species density for ozone (O3) and nitrogen oxides (NOx). It is found that in identical operation conditions (applied voltage, distance to surface and gas flow rate) the dissipated plasma power is about equal (up to 10 W), but the electrical field strength differs, having peak values of 320 kV/m for Ar and up to 300 kV/m for He. However, only for Ar CAP could we measure O3 up to 2 ppm and NOx up to 7 ppm. The surface temperature and leakage values of both systems showed different slopes, with the biggest surprise being a constant leakage current over distance for argon. These findings may open a new direction in the plasma source development for Plasma Medicine.


Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 10
Author(s):  
Marilou Cadatal-Raduban ◽  
Tomoki Kato ◽  
Yusuke Horiuchi ◽  
Jiří Olejníček ◽  
Michal Kohout ◽  
...  

Vacuum ultraviolet radiation (VUV, from 100 nm to 200 nm wavelength) is indispensable in many applications, but its detection is still challenging. We report the development of a VUV photoconductive detector, based on titanium dioxide (TiO2) nanoparticle thin films. The effect of crystallinity, optical quality, and crystallite size due to film thickness (80 nm, 500 nm, 1000 nm) and type of substrate (silicon Si, quartz SiO2, soda lime glass SLG) was investigated to explore ways of enhancing the photoconductivity of the detector. The TiO2 film deposited on SiO2 substrate with a film thickness of 80 nm exhibited the best photoconductivity, with a photocurrent of 5.35 milli-Amperes and a photosensitivity of 99.99% for a bias voltage of 70 V. The wavelength response of the detector can be adjusted by changing the thickness of the film as the cut-off shifts to a longer wavelength, as the film becomes thicker. The response time of the TiO2 detector is about 5.8 μs and is comparable to the 5.4 μs response time of a diamond UV sensor. The development of the TiO2 nanoparticle thin film detector is expected to contribute to the enhancement of the use of VUV radiation in an increasing number of important technological and scientific applications.


Author(s):  
Vikram Plomp ◽  
Xu-Dong Wang ◽  
François Lique ◽  
Jacek Kłos ◽  
Jolijn Onvlee ◽  
...  

2021 ◽  
pp. 117974
Author(s):  
Jing Zhang ◽  
Honglong Zhang ◽  
Xin Liu ◽  
Fuyi Cui ◽  
Zhiwei Zhao

Sign in / Sign up

Export Citation Format

Share Document