ENLARGEMENT OF POLY-SI FILM GRAIN SIZE BY A NEW EXCIMER LASER ANNEALING AND ITS APPLICATION TO HIGH-PERFORMANCE POLY-SI TFT

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

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Enlargement of Grain Size and Location Control of Grain in Excimer-laser Crystallization of Si Film

MRS Proceedings ◽

10.1557/proc-0910-a14-01 ◽

2006 ◽

Vol 910 ◽

Cited By ~ 1

Author(s):

Wenchang Yeh ◽

Dunyuan Ke ◽

Chunjun Zhuang

Keyword(s):

Grain Size ◽

Light Beam ◽

Excimer Laser ◽

Conventional Method ◽

Growth Process ◽

Laser Annealing ◽

Glass Structure ◽

Control Technique ◽

Back Side ◽

Excimer Laser Annealing

AbstractA technique for enlargement of grain size were shown and a technique for location controlled super lateral growth (SLG) grain in excimer laser annealing (ELA) were proposed and realized. In the technique for grain size enlargement, the grain size was enlarged to 10£gm that is more than 10 times larger than that in conventional method(~0.8£gm). The proposed sample structure was Si film/light absorptive film/Glass structure with applying the laser light from the back side of glass substrate. Time resolved(~1ns) optical measurement (TROM) revealed that the melt duration of Si film was increased to 800ns that is also 10 times longer than that in conventional method. As for the grain location control technique, a new method contains pre seeding process and post growth process were proposed and realized. In the pre seeding process, micro light beam(£g-light beam) was exposed to Si film to form a grain within the crystallized spot. £g-light beam was formed by micro-lens-array(MLA). After post growth process, single grain array with the diameters of 6£gm was formed in a period of 10£gm.

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Excimer laser annealing system for AMLCDs: a long laser pulse for high-performance, uniform, and stable TFT

10.1117/12.424884 ◽

2001 ◽

Cited By ~ 5

Author(s):

Christophe Prat ◽

Dorian Zahorski ◽

Youri Helen ◽

Taieb Mohammed-Brahim ◽

Olivier Bonnaud

Keyword(s):

Laser Pulse ◽

Excimer Laser ◽

High Performance ◽

Laser Annealing ◽

Excimer Laser Annealing

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46.3: High Performance Dual-Gate and Multi Channel Poly-Si TFTs fabricated by XeCl Excimer Laser Annealing on Selectively Floating a-Si Thin Film

SID Symposium Digest of Technical Papers ◽

10.1889/1.1832527 ◽

2003 ◽

Vol 34 (1) ◽

pp. 1310

Author(s):

I. H. Song ◽

S. H. Kang ◽

J. H. Kim ◽

M. K. Han

Keyword(s):

Thin Film ◽

Excimer Laser ◽

High Performance ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Dual Gate ◽

Si Thin Film ◽

Xecl Excimer Laser

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Flat Panel Imagers Based on Excimer Laser Annealed, poly-Si Thin Film Transistor Technology

MRS Proceedings ◽

10.1557/proc-685-d2.3.1 ◽

2001 ◽

Vol 685 ◽

Cited By ~ 2

Author(s):

J.P. Lu ◽

K. Van Schuylenbergh ◽

R. T. Fulks ◽

J. Ho ◽

Y. Wang ◽

...

Keyword(s):

Thin Film ◽

Excimer Laser ◽

High Performance ◽

Laser Annealing ◽

Noise Performance ◽

Large Area ◽

Flat Panel ◽

Excimer Laser Annealing ◽

Flat Panel Imagers ◽

Si Thin Film

AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.

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Crystallinity Improvement of Small Grained Poly-Si Films by Excimer Laser Annealing for High Performance TFT's

10.7567/ssdm.1991.pc5-7 ◽

1991 ◽

Author(s):

Takashi Noguchi ◽

Hironori Tsukamoto ◽

Toshiharu Suzuki ◽

Haruko Masuya

Keyword(s):

Excimer Laser ◽

High Performance ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Si Films

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Lateral Grain Growth in the Excimer Laser Crystallization of Poly-Si

MRS Proceedings ◽

10.1557/proc-321-657 ◽

1994 ◽

Vol 321 ◽

Cited By ~ 7

Author(s):

H. Kuriyama ◽

K. Sano ◽

S. Ishida ◽

T. Nohda ◽

Y. Aya ◽

...

Keyword(s):

Grain Size ◽

Excimer Laser ◽

Laser Annealing ◽

Field Effect Mobility ◽

Laser Crystallization ◽

Excimer Laser Annealing ◽

Short Processing Time ◽

Low Temperature Processing ◽

Excimer Laser Crystallization ◽

Annealing Method

ABSTRACTWe have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å) with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μ m) by an excimer laser annealing Method, which offers the features of low-temperature processing and a short processing time. The grain size distribution shrinks in the region around 1.5 μ m and this poly-Si film exhibits a strong (111) crystallographic orientation. Poly-Si thin film transistors using these films show quite a high field effect mobility of 440cm2/V · s below 600°C process.

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