AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.
AbstractExcimer laser annealing technique is proposed to increase the grain size and controlling the microstructure of polycrystalline silicon (poly-Si) thin film. Our method is based on the lateral grain growth during laser annealing. Our specific grid ion beam irradiation method was designed to maximize the lateral growth effect and arrange the location of grain boundaries. We observed well-arranged poly-Si grains up to micrometer order by transmission electron microscopy (TEM).
Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain Size