scholarly journals Strong strain gradients and phase coexistence at the metal-insulator transition in VO2 epitaxial films

2021 ◽  
Vol 220 ◽  
pp. 117336
Author(s):  
Laura Rodríguez ◽  
Felip Sandiumenge ◽  
Carles Frontera ◽  
José Manuel Caicedo ◽  
Jessica Padilla ◽  
...  
2009 ◽  
Vol 105 (2) ◽  
pp. 023706 ◽  
Author(s):  
A. A. Lebedev ◽  
P. L. Abramov ◽  
N. V. Agrinskaya ◽  
V. I. Kozub ◽  
S. P. Lebedev ◽  
...  

2009 ◽  
Vol 615-617 ◽  
pp. 335-338
Author(s):  
Alexander A. Lebedev ◽  
Pavel L. Abramov ◽  
Nina V. Agrinskaya ◽  
Ven I. Kozub ◽  
Alexey N. Kuznetsov ◽  
...  

n-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal--insulator transition occurs in the n-3C-SiC layer at concentrations Nd - Na ≤ 3 1017 cm-3.


2014 ◽  
Vol 104 (8) ◽  
pp. 081918 ◽  
Author(s):  
Koen Martens ◽  
Nagaphani Aetukuri ◽  
Jaewoo Jeong ◽  
Mahesh G. Samant ◽  
Stuart S. P. Parkin

2010 ◽  
Vol 108 (6) ◽  
pp. 063503 ◽  
Author(s):  
Devendra Kumar ◽  
K. P. Rajeev ◽  
A. K. Kushwaha ◽  
R. C. Budhani

2019 ◽  
Vol 115 (25) ◽  
pp. 251605 ◽  
Author(s):  
Bin Hong ◽  
Yuanjun Yang ◽  
Kai Hu ◽  
Yongqi Dong ◽  
Jingtian Zhou ◽  
...  

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