Electron-hole pair creation and conversion efficiency in radioisotope microbatteries

Precise monitoring of the incoming photon flux is crucial for many experiments using synchrotron radiation. For photon energies above a few keV, thin semiconductor photodiodes can be operated in transmission for this purpose. Diamond is a particularly attractive material as a result of its low absorption. The responsivity of a state-of-the art diamond quadrant transmission detector has been determined, with relative uncertainties below 1% by direct calibration against an electrical substitution radiometer. From these data and the measured transmittance, the thickness of the involved layers as well as the mean electron–hole pair creation energy were determined, the latter with an unprecedented relative uncertainty of 1%. The linearity and X-ray scattering properties of the device are also described.

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Electron-Hole Pair Creation at Ag and Cu Surfaces by Adsorption of Atomic Hydrogen and Deuterium

Physical Review Letters ◽

10.1103/physrevlett.82.446 ◽

1999 ◽

Vol 82 (2) ◽

pp. 446-449 ◽

Cited By ~ 181

Author(s):

H. Nienhaus ◽

H. S. Bergh ◽

B. Gergen ◽

A. Majumdar ◽

W. H. Weinberg ◽

...

Keyword(s):

Atomic Hydrogen ◽

Pair Creation ◽

Hole Pair ◽

Electron Hole ◽

Electron Hole Pair

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Electron–hole pair creation energy and Fano factor temperature dependence in silicon

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2007.10.043 ◽

2008 ◽

Vol 584 (2-3) ◽

pp. 436-439 ◽

Cited By ~ 28

Author(s):

M.N. Mazziotta

Keyword(s):

Temperature Dependence ◽

Fano Factor ◽

Pair Creation ◽

Hole Pair ◽

Electron Hole ◽

Electron Hole Pair

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Hydrogen Collision Model of The Staebler-Wronski Effect: Microscopics and Kinetics

MRS Proceedings ◽

10.1557/proc-507-709 ◽

1998 ◽

Vol 507 ◽

Cited By ~ 3

Author(s):

Howard M. Branz

Keyword(s):

Room Temperature ◽

Pair Creation ◽

Hole Pair ◽

Dangling Bond ◽

Electron Hole ◽

Spin Resonance ◽

Electron Hole Pair ◽

Staebler Wronski Effect ◽

Hydrogenated Amorphous ◽

Creation Rate

ABSTRACTA new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon (a-Si:H) is described. Recombination and trapping of photoinduced carriers excite hydrogen from deep Si-H bonds into a mobile configuration, leaving a dangling bond (DB) defect at the site of excitation. Normally, mobile H are recaptured at DB defects and no metastability or net DB production results. However, when two mobile H collide, they form a metastable two-hydrogen complex and leave two spatially-uncorrelated Staebler-Wronski DBs. Thermal and light-induced annealing occur when mobile H are excited from the metastable two-H complex; they diffuse and are recaptured to DBs. The microscopic model is entirely compatible with electron-spin-resonance results showing neither DB-DB nor DB-H spatial correlation of the light-induced DBs. The model leads to new differential equations describing the evolution of the mobile H and DB densities. These equation equations explain the observed room-temperature Ndb∼G2/3t1/3 dependence of DB creation upon the electron-hole pair creation rate (G) and time. The model also accounts for both t1/3-kinetics at 4.2K and t1/2-kinetics under laser-pulse soaking. Neither of these results can be explained within the prevailing electron-hole pair recombination model.

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