Dopant effect on in situ doped metal-induced lateral crystallization of amorphous silicon films

2005 ◽  
Vol 249 (1-4) ◽  
pp. 65-70 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Jyh-Yeu Chang ◽  
Ching-Yuan Wu
2003 ◽  
Vol 80 (3) ◽  
pp. 577-580 ◽  
Author(s):  
You-Da Lin ◽  
YewChung Sermon Wu ◽  
Chi-Wei Chao ◽  
Guo-Ren Hu

Author(s):  
S. Kritzinger ◽  
J.C. Lombaard ◽  
C.J. Bedeker

While investigating the silicide formation reaction between thin bilayers of amorphous Si (a-Si) and Cr, an unintended interaction occurred between the specimens and the supporting TEM grids. In an attempt to understand this phenomenon, the interaction between a single film of a-Si and TEM grids made of Cu, Ni, Au and Mo were investigated by in situannealing in a Siemens Elmiskop 101. The 60 nm films, prepared by e-beam evaporation of pure Si onto glass substrates, covered with an acetone-soluble release agent, were amorphous.In Fig. 1 the interaction between the a-Si film and a Cu TEM grid is shown. Areas I, II, III and IV in (a) show different stages of the interaction, area IV being closest to the Cu grid bar, and area I being pure a-Si. The reaction started at about 600°C by crystallisation of the a-Si film at different spots in contact with the grid bars, and fanned out from these nucleation sites (area II).


2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6191-6195 ◽  
Author(s):  
Chan-Jae Lee ◽  
Jae-Bok Lee ◽  
Yong-Chae Chung ◽  
Duck-kyun Choi

Sign in / Sign up

Export Citation Format

Share Document