Fabrication of ultra-shallow junction by in situ doped amorphous silicon films and its application in silicon drift detectors

2021 ◽  
Vol 55 (2) ◽  
pp. 025102
Author(s):  
Shuai Jiang ◽  
Rui Jia ◽  
Ke Tao ◽  
Longjie Wang ◽  
Wei Luo ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Shallow Junction ◽  
Silicon Drift Detectors

Diffusion of TEM grid material into amorphous silicon films

1990 ◽  
Vol 48 (4) ◽  
pp. 660-661
Author(s):  
S. Kritzinger ◽  
J.C. Lombaard ◽  
C.J. Bedeker
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Silicide Formation ◽  
Release Agent ◽  
Formation Reaction ◽  
Glass Substrates ◽  
Nucleation Sites ◽  
Amorphous Si ◽  
Tem Grid

While investigating the silicide formation reaction between thin bilayers of amorphous Si (a-Si) and Cr, an unintended interaction occurred between the specimens and the supporting TEM grids. In an attempt to understand this phenomenon, the interaction between a single film of a-Si and TEM grids made of Cu, Ni, Au and Mo were investigated by in situannealing in a Siemens Elmiskop 101. The 60 nm films, prepared by e-beam evaporation of pure Si onto glass substrates, covered with an acetone-soluble release agent, were amorphous.In Fig. 1 the interaction between the a-Si film and a Cu TEM grid is shown. Areas I, II, III and IV in (a) show different stages of the interaction, area IV being closest to the Cu grid bar, and area I being pure a-Si. The reaction started at about 600°C by crystallisation of the a-Si film at different spots in contact with the grid bars, and fanned out from these nucleation sites (area II).

Photoemission studies on in situ prepared hydrogenated amorphous silicon films

1979 ◽  
Vol 40 (6) ◽  
pp. 433-450 ◽  
Author(s):  
B. von Roedern ◽  
L. Ley ◽  
M. Cardona ◽  
F. W. Smith
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous

Resistless Patterning of Hydrogenated Amorphous Silicon Films

1999 ◽  
Vol 557 ◽  
Author(s):  
Russell E. Hollingsworth ◽  
Mary K. Hemdon ◽  
Reuben T. Collins ◽  
J.D. Benson ◽  
J.H. Dinan ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Pattern Generation ◽  
Silicon Films ◽  
Contact Printing ◽  
Direct Patterning ◽  
Projection Lithography ◽  
Wide Range ◽  
Hydrogenated Amorphous

AbstractPractical methods for directly patterning hydrogenated amorphous silicon (a-Si:H) films have been developed. Direct patterning involves selectively oxidizing the hydrogen passivated a-Si:H surface or laser crystallization of the bulk. The oxide or polycrystalline layer formed in this way then becomes a mask for subsequent hydrogen plasma etching. Methods for selective oxidation of the a-Si:H surface have been extensively studied. Examination of the pattern generation threshold dose for excitation wavelengths from 248 to 633nm provides indirect evidence for electron-hole recombination breaking of the silicon-hydrogen bond. An additional hydrogen removal mechanism was observed whereby simple proximity of a tapered fiber optic probe less than 30nm from the sample surface resulted in pattern generation. Patterns were generated in both intrinsic and doped a-Si:H films by several means, including contact printing with a mask aligner, in situ projection lithography with an excimer laser, and direct writing with a near-field scanning optical microscope (NSOM). Direct patterning of a-Si:H films has a wide range of potential applications. We have demonstrated a-Si:H as an in situ photoresist material for patterning HgCdTe infrared detector arrays with all process steps done in vacuum. We have also demonstrated 100nm line widths using NSOM writing with a photolithography goal. Direct patterning of a-Si:H could simplify the manufacturing of thin film transistors, or other devices that require patterned silicon films.

In-situ electrical measurement in ion implanted amorphous silicon films

1981 ◽  
Vol 81 (9) ◽  
pp. 519-521 ◽  
Author(s):  
Y. Ochiai ◽  
K. Uematsu ◽  
K. Takita ◽  
K. Masuda
Keyword(s):  
Amorphous Silicon ◽  
Electrical Measurement ◽  
Silicon Films ◽  
Ion Implanted

Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD

2011 ◽  
Vol 60 (1) ◽  
pp. 13-17 ◽  
Author(s):  
Oliver Skibitzki ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Günter Weidner ◽  
Bernd Tillack
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Epitaxy
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